Electrical and optical characteristics of different GaN-based light emitting diodes with current blocking layer

被引：0
|
作者：
Guo, Wei-Ling [1 ]
Yu, Xin [1 ]
Liu, Jian-Peng [1 ]
Fan, Xing [1 ]
Bai, Jun-Xue [1 ]
机构：
[1] Key Laboratory of Opto-electronics Technology, Beijing University of Technology, Beijing 100124, China
来源：
Faguang Xuebao/Chinese Journal of Luminescence | 2013年 / 34卷 / 07期
关键词：
III-V semiconductors - Silica - Semiconductor quantum wells - Light absorption - Electrodes - Efficiency - Gallium nitride;
D O I：
10.3788/fgxb20133407.0918
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：918 / 923
相关论文
共 50 条
  • [41] Electrical-optical analysis of photonic crystals GaN-based high power light emitting diodes
    Meng Liu
    Kang Li
    Fan-min Kong
    Jia Zhao
    Qing-an Ding
    Ming-yu Zhang
    Optical and Quantum Electronics, 2016, 48
  • [42] Electrical-optical analysis of photonic crystals GaN-based high power light emitting diodes
    Liu, Meng
    Li, Kang
    Kong, Fan-min
    Zhao, Jia
    Ding, Qing-an
    Zhang, Ming-yu
    OPTICAL AND QUANTUM ELECTRONICS, 2016, 48 (05)
  • [43] On the impact of the beveled mesa for GaN-based micro-light emitting diodes: electrical and optical properties
    Hang, Sheng
    Zhang, Gai
    Chu, Chunshuang
    Zhang, Yonghui
    Zheng, Quan
    Li, Qing
    Zhang, Zi-Hui
    OPTICS EXPRESS, 2022, 30 (21) : 37675 - 37685
  • [44] Electrical and optical characteristics of GaN-based light-emitting diodes fabricated with emission wavelengths of 429-467 nm
    Jung, Eunjin
    Kim, Seongjun
    Kim, Hyunsoo
    CURRENT APPLIED PHYSICS, 2012, 12 (03) : 885 - 889
  • [45] Characteristics of an Electrically Pumped GaN-based Microcavity Light Emitter with an AlN Current Blocking Layer
    Cheng, Bo-Siao
    Wu, Tzeng-Tsong
    Lai, Ying-You
    Wu, Yun-Lin
    Chen, Cheng-Hung
    Lu, Tien-Chang
    Kuo, Hao-Chung
    Wang, Shing-Chung
    2012 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), 2012,
  • [46] GaN-Based Blue Light-Emitting Diodes with an Electron Transmission Layer
    Jheng, J. S.
    Wang, C. K.
    Chiou, Y. Z.
    Chang, S. P.
    Chang, S. J.
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2017, 6 (10) : R154 - R157
  • [47] Enhanced light extraction efficiency of GaN-based light-emittng diodes by nitrogen implanted current blocking layer
    Kim, Yong Deok
    Oh, Seung Kyu
    Park, Min Joo
    Kwak, Joon Seop
    MATERIALS RESEARCH BULLETIN, 2016, 82 : 35 - 38
  • [48] Dependence of leakage current on dislocations in GaN-based light-emitting diodes
    Li, DS
    Chen, H
    Yu, HB
    Jia, HQ
    Huang, Q
    Zhou, JM
    JOURNAL OF APPLIED PHYSICS, 2004, 96 (02) : 1111 - 1114
  • [49] Effects of Temperature on Current Crowding of GaN-Based Light-Emitting Diodes
    Jung, Eunjin
    Kim, Seongjun
    Kim, Hyunsoo
    IEEE ELECTRON DEVICE LETTERS, 2013, 34 (02) : 277 - 279
  • [50] Forward tunneling current in GaN-based blue light-emitting diodes
    Yan, Dawei
    Lu, Hai
    Chen, Dunjun
    Zhang, Rong
    Zheng, Youdou
    APPLIED PHYSICS LETTERS, 2010, 96 (08)
12345