Study of drain alloy for antimony substrate vertical high voltage power metal oxide semiconductor field effect transistors

被引：0
|
作者：
Liao, Chien-Nan [1 ]
Chien, Feng-Tso [2 ]
Chen, Chii-Wen [3 ]
Tsai, Yao-Tsung [1 ]
机构：
[1] Department of Electrical Engineering, National Central University, Jhongli 320, Taiwan
[2] Department of Electronic Engineering, Feng Chia University, Taichung 407, Taiwan
[3] Department of Electronic Engineering, Minghsin University of Science and Technology, Hsinchu 304, Taiwan
来源：
Japanese Journal of Applied Physics | 2008年 / 47卷 / 4 PART 1期
关键词：
An antimony (Sb)-doped substrate is used to fabricate high voltage power metal oxide semiconductor field effect transistor (MOSFET) to prevent out-doping phenomenon. Since the contact resistance of Sb-doped substrate is higher than that of the phosphorus (P) and arsenic (As)-doped substrates; which are widely used for low breakdown voltage power MOSFETs; devices that are fabricated with an Sb substrate have a higher source-drain forward voltage (VSD). The increased VSD is associated with power loss while the device is under switching in an inductive load bridge circuit. In this work; devices were baked at different temperatures for various times to reduce the VSD. The VSD was efficiently reduced at 300C after 6h baking. © 2008 The Japan Society of Applied Physics;
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页码：2122 / 2123
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