Three-dimensional morphology evolution of SiO2 patterned films under MeV ion irradiation

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作者：
Otani, Kan [1 ]
Chen, Xi [2 ]
Hutchinson, John W. [1 ]
Chervinsky, John F. [1 ]
Aziz, Michael J. [1 ]
机构：
[1] Division of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138
[2] Department of Civil Engineering and Engineering Mechanics, Columbia University, New York, NY 10027
来源：
Journal of Applied Physics | 2006年 / 100卷 / 02期
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