The electron beam hole drilling of silicon nitride thin films

被引：0
|
作者：
Howitt, D.G. [1 ]
Chen, S.J. [2 ]
Gierhart, B.C. [2 ]
Smith, R.L. [2 ]
Collins, S.D. [2 ]
机构：
[1] Department of Chemical Engineering and Materials Science, University of California Davis, CA 95616, United States
[2] Micro Instruments and Systems Laboratory, Laboratory for Surface Science and Technology, University of Maine, Orono, ME 04469, United States
来源：
Journal of Applied Physics | 2008年 / 103卷 / 02期
关键词：
The mechanism by which an intense electron beam can produce holes in thin films of silicon nitride has been investigated using a combination of in situ electron energy loss spectrometry and electron microscopy imaging. A brief review of electron beam interactions that lead to material loss in different materials is also presented. The loss of nitrogen and silicon decreases with decreasing beam energy and although still observable at a beam energy of 150 keV ceases completely at 120 keV. The linear behavior of the loss rate coupled with the energy dependency indicates that the process is primarily one of direct displacement; involving the sputtering of atoms from the back surface of the specimen with the rate controlling mechanism being the loss of nitrogen. © 2008 American Institute of Physics;
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