The electron beam hole drilling of silicon nitride thin films

被引：0
|
作者：
Howitt, D.G. [1 ]
Chen, S.J. [2 ]
Gierhart, B.C. [2 ]
Smith, R.L. [2 ]
Collins, S.D. [2 ]
机构：
[1] Department of Chemical Engineering and Materials Science, University of California Davis, CA 95616, United States
[2] Micro Instruments and Systems Laboratory, Laboratory for Surface Science and Technology, University of Maine, Orono, ME 04469, United States
来源：
Journal of Applied Physics | 2008年 / 103卷 / 02期
关键词：
The mechanism by which an intense electron beam can produce holes in thin films of silicon nitride has been investigated using a combination of in situ electron energy loss spectrometry and electron microscopy imaging. A brief review of electron beam interactions that lead to material loss in different materials is also presented. The loss of nitrogen and silicon decreases with decreasing beam energy and although still observable at a beam energy of 150 keV ceases completely at 120 keV. The linear behavior of the loss rate coupled with the energy dependency indicates that the process is primarily one of direct displacement; involving the sputtering of atoms from the back surface of the specimen with the rate controlling mechanism being the loss of nitrogen. © 2008 American Institute of Physics;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
引用
收藏
相关论文
共 50 条
  • [21] Electron-Beam Crystallization of Thin Films of Amorphous Silicon Suboxide
    E. A. Baranov
    V. O. Konstantinov
    V. G. Shchukin
    A. O. Zamchiy
    I. E. Merkulova
    N. A. Lunev
    V. A. Volodin
    Technical Physics Letters, 2021, 47 : 263 - 265
  • [22] Cathodoluminescence Properties of Silicon Thin Films Crystallized by Electron Beam Exposure
    Park, Seon Yong
    Lee, Su Woong
    Kang, Jung Soo
    Lee, Ha Rim
    Jo, Mi Yeon
    Kim, Jin Kyo
    Park, Kyu Chang
    2013 26TH INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE (IVNC), 2013,
  • [23] Enhanced reduction of silicon oxide thin films on silicon under electron beam annealing
    Kennedy, J.
    Leveneur, J.
    Fang, F.
    Markwitz, A.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2014, 332 : 421 - 425
  • [24] Dual ion beam sputtering deposition of silicon oxy-nitride thin films
    Sarto, F
    Rizzo, A
    Giorgi, R
    Turtu, S
    Scaglione, S
    DEVELOPMENTS IN OPTICAL COMPONENT COATINGS, 1996, 2776 : 373 - 380
  • [25] THIN SILICON-NITRIDE FILMS TO INCREASE RESOLUTION IN E-BEAM LITHOGRAPHY
    DOBISZ, EA
    MARRIAN, CRK
    SALVINO, RE
    ANCONA, MA
    RHEE, KW
    PECKERAR, MC
    OPTICAL ENGINEERING, 1993, 32 (10) : 2452 - 2458
  • [26] Preparation of silicon carbide nitride thin films by sputtering of silicon nitride target
    Peng, XF
    Song, LX
    Meng, J
    Zhang, YZ
    Hu, XF
    APPLIED SURFACE SCIENCE, 2001, 173 (3-4) : 313 - 317
  • [27] Spectroellipsometric characterization of thin silicon nitride films
    Shizuoka Univ, Hamamats, Japan
    Thin Solid Films, 1998, 313-314 (1-2): : 298 - 302
  • [28] Spectroellipsometric characterization of thin silicon nitride films
    Jiang, ZT
    Yamaguchi, T
    Aoyama, M
    Nakanishi, Y
    Asinovsky, L
    THIN SOLID FILMS, 1998, 313 : 298 - 302
  • [29] Potentiostatic testing of thin silicon nitride films
    Ulrich, R
    Zhao, G
    Brown, W
    CHEMICAL ENGINEERING COMMUNICATIONS, 1995, 137 : 23 - 32
  • [30] Potentiostatic testing of thin silicon nitride films
    Ulrich, R.
    Zhao, G.
    Brown, W.
    Chemical Engineering Communications, 1995, 137 : 23 - 32
12345