Concentration-dependent self-diffusion coefficients in amorphous Si1-xGex solid solutions: An interdiffusion study

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[1] Noah, Martin A.
[2] Flötotto, David
[3] Wang, Zumin
[4] 1,Mittemeijer, Eric J.
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Noah, Martin A. (m.noah@is.mpg.de) | 1600年 / American Institute of Physics Inc.卷 / 117期
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Self-diffusion coefficients of Si and Ge in amorphous Si1-xGex (a-Si1-xGex) solid solutions were determined quantitatively in the temperature range of 440 °C - 460 °C by the investigation of interdiffusion in amorphous Si/Si0.52Ge0.48 multilayers using Auger electron spectroscopy sputter-depth profiling. The determined concentration dependent self-diffusion coefficients of Si and Ge in a-Si1-xGex with 0 ≤ x ≤ 0.48 at. % Ge are about ten orders of magnitude larger than in the corresponding crystalline phases; due to the inherent; excess free volume in the amorphous phase. The self-diffusion coefficient of Si (or Ge) in a-Si1-xGex increases in association with a decreasing activation enthalpy with increasing Ge concentration. This concentration dependence has been related to an overall decrease of the average bond strength with increasing Ge concentration. © 2015 AIP Publishing LLC;
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