Concentration-dependent self-diffusion coefficients in amorphous Si1-xGex solid solutions: An interdiffusion study

被引：0
|
作者：
机构：
[1] Noah, Martin A.
[2] Flötotto, David
[3] Wang, Zumin
[4] 1,Mittemeijer, Eric J.
来源：
Noah, Martin A. (m.noah@is.mpg.de) | 1600年 / American Institute of Physics Inc.卷 / 117期
关键词：
Self-diffusion coefficients of Si and Ge in amorphous Si1-xGex (a-Si1-xGex) solid solutions were determined quantitatively in the temperature range of 440 °C - 460 °C by the investigation of interdiffusion in amorphous Si/Si0.52Ge0.48 multilayers using Auger electron spectroscopy sputter-depth profiling. The determined concentration dependent self-diffusion coefficients of Si and Ge in a-Si1-xGex with 0 ≤ x ≤ 0.48 at. % Ge are about ten orders of magnitude larger than in the corresponding crystalline phases; due to the inherent; excess free volume in the amorphous phase. The self-diffusion coefficient of Si (or Ge) in a-Si1-xGex increases in association with a decreasing activation enthalpy with increasing Ge concentration. This concentration dependence has been related to an overall decrease of the average bond strength with increasing Ge concentration. © 2015 AIP Publishing LLC;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] The local atomic structures in Si1-xGex and Si1-xSnx random solid solutions
    Deibuk, V. G.
    Korolyuk, Yu G.
    SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS, 2005, 8 (01) : 1 - 5
  • [22] SELF-DIFFUSION COEFFICIENTS OF ALUMINUM IN COPPER(RICH)-ALUMINUM SOLID SOLUTIONS
    OIKAWA, H
    KARASHIMA, S
    TRANSACTIONS OF THE JAPAN INSTITUTE OF METALS, 1970, 11 (06): : 431 - +
  • [23] SELF-DIFFUSION AND INTERDIFFUSION IN gamma SOLID SOLUTIONS OF THE IRON-MANGANESE SYSTEM.
    Nohara, Kiyohiko
    Hirano, Ken-ichi
    1973, 37 (01): : 51 - 61
  • [24] Composition and temperature dependence of self-diffusion in Si1−xGex alloys
    Vassilis Saltas
    Alexander Chroneos
    Filippos Vallianatos
    Scientific Reports, 7
  • [25] Thermal desorption spectrometry study of Si1-xGex:H amorphous alloys
    Rinnert, H
    Vergnat, M
    Marchal, G
    Burneau, A
    APPLIED SURFACE SCIENCE, 1997, 119 (3-4) : 224 - 228
  • [26] Effect of injection of Si self-interstitials on Sb diffusion in Si/Si1-xGex/Si heterostructures
    Kuznetsov, AY
    Grahn, J
    Cardenas, J
    Svensson, BG
    Hansen, JL
    Larsen, AN
    PHYSICAL REVIEW B, 1998, 58 (20): : 13355 - 13358
  • [27] SELF-COMPENSATION OF DOUBLE ZINC ACCEPTORS IN SI1-XGEX SILICON GERMANIUM SOLID-SOLUTIONS
    BAGRAEV, NT
    MIRSAATOV, RM
    POLOVTSEV, IS
    SIROZHOV, U
    YUSUPOV, A
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1992, 26 (05): : 470 - 472
  • [28] The hydration of proteins in solutions by self-diffusion coefficients NMR study
    Baranowska, HM
    Olszewski, KJ
    BIOCHIMICA ET BIOPHYSICA ACTA-GENERAL SUBJECTS, 1996, 1289 (03): : 312 - 314
  • [29] Concentration dependences of self-diffusion coefficients of water molecules in dilute solutions of saccharides
    Sevryugin, VA
    Skirda, VD
    ZHURNAL FIZICHESKOI KHIMII, 1999, 73 (05): : 853 - 856
  • [30] Generalized concentration dependence of globular protein self-diffusion coefficients in aqueous solutions
    Nesmelova, IV
    Skirda, VD
    Fedotov, VD
    BIOPOLYMERS, 2002, 63 (02) : 132 - 140
12345