Development and prospect of SiC power devices in power grid

被引：0

作者：

Sheng, Kuang ^{[1
]}

Guo, Qing ^{[1
]}

Zhang, Junming ^{[1
]}

Qian, Zhaoming ^{[1
]}

机构：

[1] Department of Electrical Engineering, Zhejiang University, Hangzhou 310027, Zhejiang Province, China

来源：

Zhongguo Dianji Gongcheng Xuebao/Proceedings of the Chinese Society of Electrical Engineering | 2012年 / 32卷 / 30期

关键词：

Energy gap - Electric power transmission networks - Wide band gap semiconductors - Electric fields - MOSFET devices;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Silicon Carbide (SiC) is a wide-bandgap semiconductor that has drawn significant research interests in recent years for its superior physical and electrical properties, such as larger bandgap, high breakdown electric field, high electron saturation velocity and high thermal conductivity. The paper introduces the developments of Silicon Carbide power devices in power grid, including the SiC PiN diodes, SiC-MOSFETs, SiC-IGBTs and SiC Thyristors. The perspectives of SiC power electronic devices in power grid are also proposed. The speedy growth of high power and high current SiC devices will have a strong impact on the development of power grid. © 2012 Chin. Soc. for Elec. Eng.

引用

页码：1 / 7

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