Wide Bandgap SiC Power Devices

被引：0
|
作者：
Chan, Ian [1 ]
Yen, C. T. [2 ]
Hung, C. C. [2 ]
Lee, C. Y. [2 ]
机构：
[1] Episil Technol Inc, Hsinchu Sci Pk, Hsinchu 300, Taiwan
[2] Hestia Power Inc, Hsinchu 300, Taiwan
来源：
2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT) | 2014年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页数：4
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