Effect of Si intermediate layer on high relaxed SiGe layer grown using low temperature Si buffer

被引：0
|
作者：
Yang, Hongbin [1 ]
Fan, Yongliang [1 ]
机构：
[1] National Key Laboratory of Surface Physics, Fudan University, Shanghai 200433, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 2006年 / 27卷 / SUPPL.期
关键词：
13;
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页码：144 / 147
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