Effect of Si intermediate layer on high relaxed SiGe layer grown using low temperature Si buffer

被引：0
|
作者：
Yang, Hongbin [1 ]
Fan, Yongliang [1 ]
机构：
[1] National Key Laboratory of Surface Physics, Fudan University, Shanghai 200433, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 2006年 / 27卷 / SUPPL.期
关键词：
13;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：144 / 147
相关论文
共 50 条
  • [31] Thermal stability investigation of SiGe virtual substrate with a thin Ge buffer layer grown on Si substrate
    Qi, Dongfeng
    Liu, Hanhui
    Chen, Songyan
    Li, Cheng
    Lai, Hongkai
    JOURNAL OF CRYSTAL GROWTH, 2013, 375 : 115 - 118
  • [32] MAGNETOTRANSPORT STUDIES OF REMOTE DOPED SI/SI1-XGEX HETEROSTRUCTURES GROWN ON RELAXED SIGE BUFFER LAYERS
    TOBBEN, D
    SCHAFFLER, F
    ZRENNER, A
    ABSTREITER, G
    THIN SOLID FILMS, 1992, 222 (1-2) : 15 - 19
  • [33] 3C-SiC grown on Si by using a Si1-xGex buffer layer
    Zimbone, M.
    Zielinski, M.
    Barbagiovanni, E. G.
    Calabretta, C.
    La Via, F.
    JOURNAL OF CRYSTAL GROWTH, 2019, 519 : 1 - 6
  • [34] Characterization and improvement of GaAs layers grown on Si using an ultrathin a-Si film as a buffer layer
    Hao, MS
    Shao, CL
    Soga, T
    Jimbo, T
    Umeno, M
    Liang, JW
    Zheng, LX
    Xiao, ZB
    Xiao, JF
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1996, 35 (8A): : L960 - L963
  • [35] Characterization of mismatched SiGe grown on low temperature Si buffer layers by molecular beam epitaxy
    Linder, KK
    Zhang, FC
    Rieh, JS
    Bhattacharya, P
    JOURNAL OF CRYSTAL GROWTH, 1997, 175 : 499 - 503
  • [36] Characterization of mismatched SiGe grown on low temperature Si buffer layers by molecular beam epitaxy
    Linder, K.K.
    Zhang, F.C.
    Rieh, J.-S.
    Bhattacharya, P.
    Journal of Crystal Growth, 1997, 175-176 (pt 1): : 499 - 503
  • [37] Plasma hydrogenation of strain-relaxed SiGe/Si heterostructure for layer transfer
    Chen, P
    Chu, PK
    Höchbauer, T
    Nastasi, M
    Buca, D
    Mantl, S
    Theodore, ND
    Alford, TL
    Mayer, JW
    Loo, R
    Caymax, M
    Cai, M
    Lau, SS
    APPLIED PHYSICS LETTERS, 2004, 85 (21) : 4944 - 4946
  • [38] Ge self-assembled islands grown on SiGe/Si(001) relaxed buffer layers
    Shaleev, MV
    Novikov, AV
    Kuznetsov, OA
    Yablonsky, AN
    Vostokov, NV
    Drozdov, YN
    Lobanov, DN
    Krasilnik, ZF
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2005, 124 : 466 - 469
  • [39] Cathodoluminescence investigation of relaxed Si1-xGex layer and composition-graded SiGe layer
    Sumitomo, Takamichi
    Kita, Haruki
    Matsumoto, Satoru
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (4A): : 1463 - 1465
  • [40] Surface roughness and dislocation distribution in compositionally graded relaxed SiGe buffer layer with inserted-strained Si layers
    Yoon, TS
    Liu, J
    Noori, AM
    Goorsky, MS
    Xie, YH
    APPLIED PHYSICS LETTERS, 2005, 87 (01)
12345