Charging mechanism in a SiO2 matrix embedded with Si nanocrystals

被引：0

作者：

Liu, Y. ^{[1
]}

Chen, T.P. ^{[1
]}

Ding, L. ^{[1
]}

Zhang, S. ^{[2
]}

Fu, Y.Q. ^{[2
]}

Fung, S. ^{[3
]}

机构：

[1] School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore

[2] School of Mechanical and Aerospace Engineering, Nanyang Technological University, Singapore 639798, Singapore

[3] Department of Physics, University of Hong Kong, Hong Kong, Hong Kong

来源：

Journal of Applied Physics | 2006年 / 100卷 / 09期

关键词：

One of the applications of a Si nanocrystals (nc-Si) embedded in a Si O2 matrix is in the area of nonvolatile memory devices based on the charge storage in the material system. However; whether the charge trapping mainly occurs at the nc-SiSi O2 interface or in the nc-Si is still unclear. In this work; by x-ray photoemission spectroscopy analysis of the Si 2p peaks; the concentrations of both the nc-Si and the Si suboxides that exist at the nc-SiSi O2 interface are determined as a function of thermal annealing; and the charging effect is also measured by monitoring the shift of the surface C 1s peak. It is observed that the annealing-caused reduction of the total concentration of the interfacial suboxides is much faster than that of both the C 1s shift and the nc-Si concentration. In addition; the trend of the C 1s shift coincides with that of the nc-Si concentration. The results suggest that the Si nanocrystal; rather than the nc-SiSi O2 interface; plays the dominant role in the charging effect. © 2006 American Institute of Physics;

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