Charging mechanism in a SiO2 matrix embedded with Si nanocrystals

被引：0
|
作者：
Liu, Y. [1 ]
Chen, T.P. [1 ]
Ding, L. [1 ]
Zhang, S. [2 ]
Fu, Y.Q. [2 ]
Fung, S. [3 ]
机构：
[1] School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore
[2] School of Mechanical and Aerospace Engineering, Nanyang Technological University, Singapore 639798, Singapore
[3] Department of Physics, University of Hong Kong, Hong Kong, Hong Kong
来源：
Journal of Applied Physics | 2006年 / 100卷 / 09期
关键词：
One of the applications of a Si nanocrystals (nc-Si) embedded in a Si O2 matrix is in the area of nonvolatile memory devices based on the charge storage in the material system. However; whether the charge trapping mainly occurs at the nc-SiSi O2 interface or in the nc-Si is still unclear. In this work; by x-ray photoemission spectroscopy analysis of the Si 2p peaks; the concentrations of both the nc-Si and the Si suboxides that exist at the nc-SiSi O2 interface are determined as a function of thermal annealing; and the charging effect is also measured by monitoring the shift of the surface C 1s peak. It is observed that the annealing-caused reduction of the total concentration of the interfacial suboxides is much faster than that of both the C 1s shift and the nc-Si concentration. In addition; the trend of the C 1s shift coincides with that of the nc-Si concentration. The results suggest that the Si nanocrystal; rather than the nc-SiSi O2 interface; plays the dominant role in the charging effect. © 2006 American Institute of Physics;
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