共 28 条
- [21] Suppression of boron penetration from source/drain-extension to improve gate leakage characteristics and gate-oxide reliability for 65-nm node CMOS and beyond Hayashi, T., 1600, Japan Society of Applied Physics (44):
- [23] Advanced input/output technology using laterally modulated channel metal-oxide-semiconductor field effect transistor for 65-nm node system on a chip Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap, 4 B (3117-3120):
- [24] Advanced input/output technology using laterally modulated channel metal-oxide-semiconductor field effect transistor for 65-nm node system on a chip JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (4B): : 3117 - 3120
- [25] Micro-fabrication system of cylindrical components with very high aspect ratio by centerless grinding with ELID and EDT (Electro-discharge truing) 1998 JAPAN-U.S.A. SYMPOSIUM ON FLEXIBLE AUTOMATION - PROCEEDINGS, VOLS I AND II, 1998, : 313 - 318
- [26] Performance of novel 198.5nm wavelength mask inspection system for 65mn node and beyond optical lithography era 24TH ANNUAL BACUS SYMPOSIUM ON PHOTOMASK TECHNOLOGY, PT 1 AND 2, 2004, 5567 : 993 - 1004
- [27] Performance of a high-productivity 300-mm dual-stage 193-nm 0.75-NA TWINSCANTM AT:1100B system for 100-nm applications JOURNAL OF MICROLITHOGRAPHY MICROFABRICATION AND MICROSYSTEMS, 2003, 2 (01): : 8 - 18
- [28] Advanced mask inspection optical system (AMOS) using 198.5nm wavelength for 65nm (hp) node and beyond - System development and initial state D/D inspection performance 24TH ANNUAL BACUS SYMPOSIUM ON PHOTOMASK TECHNOLOGY, PT 1 AND 2, 2004, 5567 : 1011 - 1023