A model for the thermal degradation of metal/ (p-GaN) interface in GaN-based light emitting diodes

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作者：
Meneghini, M. [1 ]
Rigutti, L. [2 ]
Trevisanello, L.R. [1 ]
Cavallini, A. [2 ]
Meneghesso, G. [1 ]
Zanoni, E. [1 ]
机构：
[1] Department of Electrical Engineering, University of Padova, via Gradenigo 6A, 35131 Padova, Italy
[2] CNISM, Department of Physics, University of Bologna, Viale Berti Pichat 6/2, 40127 Bologna, Italy
来源：
Journal of Applied Physics | 2008年 / 103卷 / 06期
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