Realizing In-Memory Computing using Reliable Differential 8T SRAM for Improved Latency

被引：0
|
作者：
Dahiya, Ayush [1 ]
Mittal, Poornima [1 ]
Rohilla, Rajesh [1 ]
机构：
[1] Department of Electronics and Communication, Delhi Technological University, Delhi, New Delhi, India
来源：
ACM Transactions on Design Automation of Electronic Systems | 2024年 / 29卷 / 06期
关键词：
Static random access storage;
D O I：
10.1145/3696666
中图分类号：
学科分类号：
摘要：
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