Investigation of abrasive removal depth of sapphire wafer for different slurry volume concentrations of chemical mechanical polishing with cross pattern polishing pad

被引:0
|
作者
Department of Mechanical Engineering, National Taiwan University of Science and Technology, Taipei [1 ]
10607, Taiwan
不详 [2 ]
32093, Taiwan
机构
关键词
Compendex;
D O I
暂无
中图分类号
学科分类号
摘要
Abrasives
引用
收藏
相关论文
共 50 条
  • [21] The Influence of Abrasive Size on High-Pressure Chemical Mechanical Polishing of Sapphire Wafer
    Park, Chuljin
    Kim, Hyoungjae
    Lee, Sangjik
    Jeong, Haedo
    INTERNATIONAL JOURNAL OF PRECISION ENGINEERING AND MANUFACTURING-GREEN TECHNOLOGY, 2015, 2 (02) : 157 - 162
  • [22] Effect of Abrasive Concentration on Chemical Mechanical Polishing of Sapphire
    闫未霞
    张泽芳
    郭晓慧
    刘卫丽
    宋志棠
    Chinese Physics Letters, 2015, 32 (08) : 185 - 188
  • [23] Effect of Abrasive Concentration on Chemical Mechanical Polishing of Sapphire
    闫未霞
    张泽芳
    郭晓慧
    刘卫丽
    宋志棠
    Chinese Physics Letters, 2015, (08) : 185 - 188
  • [24] Effect of Abrasive Concentration on Chemical Mechanical Polishing of Sapphire
    Yan Wei-Xia
    Zhang Ze-Fang
    Guo Xiao-Hui
    Liu Wei-Li
    Song Zhi-Tang
    CHINESE PHYSICS LETTERS, 2015, 32 (08)
  • [25] Effect of Groove Pattern of Chemical Mechanical Polishing Pad on Slurry Flow Behavior
    Yamazaki, Tsutomu
    Doi, Toshiro K.
    Uneda, Michio
    Kurokawa, Syuhei
    Ohnishi, Osamu
    Seshimo, Kiyoshi
    Aida, Hideo
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (05)
  • [26] Study on the Slurry for Chemical Mechanical Polishing of GaN Wafer
    Liu, Yang
    Zhang, Baoguo
    Qin, Sihui
    Wang, Yijun
    Xian, Wenhao
    Liu, Min
    Cui, Dexing
    CONFERENCE OF SCIENCE & TECHNOLOGY FOR INTEGRATED CIRCUITS, 2024 CSTIC, 2024,
  • [27] Contact model for a pad asperity and a wafer surface in the presence of abrasive particles for chemical mechanical polishing
    Bozkaya, Dincer
    Muftu, Sinan
    ADVANCES AND CHALLENGES IN CHEMICAL MECHANICAL PLANARIZATION, 2007, 991 : 343 - 348
  • [28] A model of pad-abrasive interactions in chemical mechanical polishing
    Paul, Ed
    Horn, John
    Li, Ying
    Babu, S. V.
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2007, 10 (04) : H131 - H133
  • [29] Evaluation of chemical mechanical polishing characteristics using mixed abrasive slurry: A study on polishing behavior and material removal mechanism
    Zhu, Xiaoxiao
    Ding, Juxuan
    Mo, Zhangchao
    Jiang, Xuesong
    Sun, Jifei
    Fu, Hao
    Gui, Yuziyu
    Ban, Boyuan
    Wang, Ling
    Chen, Jian
    APPLIED SURFACE SCIENCE, 2025, 679
  • [30] Investigation on Material Removal Uniformity in Electrochemical Mechanical Polishing by Polishing Pad with Holes
    Liu, Zuotao
    Jin, Zhuji
    Wu, Di
    Guo, Jiang
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2019, 8 (05) : P3047 - P3052