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- [1] Investigation of Abrasive Removal Depth of Sapphire Wafer for Different Slurry Volume Concentrations of Chemical Mechanical Polishing with Cross Pattern Polishing Pad JOURNAL OF THE CHINESE SOCIETY OF MECHANICAL ENGINEERS, 2015, 36 (02): : 155 - 165
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- [3] Abrasive removal depth for polishing a sapphire wafer by a cross-patterned polishing pad with different abrasive particle sizes INTERNATIONAL JOURNAL OF ADVANCED MANUFACTURING TECHNOLOGY, 2014, 74 (1-4): : 25 - 36
- [4] Theoretical Simulation and Regression Analysis for Abrasive Removal Depth of Chemical Mechanical Polishing with Pattern-free Polishing Pad at Different Volume Concentrations of Slurry and Experiment JOURNAL OF THE CHINESE SOCIETY OF MECHANICAL ENGINEERS, 2020, 41 (06): : 713 - 723
- [6] Considering Different Temperatures and Volume Concentrations of Slurry to Esitablish Simulation and Regression Analysis Model of Abrasive Removal Depth of Silicon Wafer for Chemical Mechanical Polishing Journal of the Chinese Society of Mechanical Engineers, Transactions of the Chinese Institute of Engineers, Series C/Chung-Kuo Chi Hsueh Kung Ch'eng Hsuebo Pao, 2022, 43 (05): : 399 - 410
- [7] Considering Different Temperatues and Volume Concentrations of Slurry to Esitablish Simulation and Regression Analysis Model of Abrasive Removal Depth of Silicon Wafer for Chemical Mechanical Polishing JOURNAL OF THE CHINESE SOCIETY OF MECHANICAL ENGINEERS, 2022, 43 (05): : 399 - 410
- [10] Establishment of Theoretical Model and Experiment of Abrasive Removal Depth with Consideration of the Chemical Reaction Effect of Slurry with Different Volume Concentrations and Exploration of the Effect on Chemical Mechanical Polishing of Silicon Wafer JOURNAL OF THE CHINESE SOCIETY OF MECHANICAL ENGINEERS, 2017, 38 (05): : 453 - 467