A view of the implanted SiC damage by Rutherford backscattering spectroscopy, spectroscopic ellipsometry, and transmission electron microscopy

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作者：
Battistig, G. [1 ]
Khánh, N.Q. [1 ]
Petrik, P. [1 ]
Lohner, T. [1 ]
Dobos, L. [1 ]
Ṕcz, B. [1 ]
García López, J. [2 ]
Morilla, Y. [2 ]
机构：
[1] Research Institute for Technical Physics and Materials Science, Konkoly Thege Miklos ut 29-33, H-1121 Budapest, Hungary
[2] Centro Nacional de Aceleradores, Avda. Thomas A. Edison s/n, E-41092 Sevilla, Spain
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Journal of Applied Physics | 2006年 / 100卷 / 09期
关键词：
4H-SiC single crystalline substrates were implanted at room temperature with 150 keV Al+ ions using fluences of 4× 1014; 1×; 1015; and 2× 1015 cm-2 with current density of 2.5 μA cm-2. The samples were subsequently annealed at 1100°C in N2 for 1 h in order to analyze their structural recovery. The disorder induced in both sublattices by the Al+ ions was studied by backscattering spectrometry in channeling geometry with a 3.5 MeV He2+ beam. The results were compared with the optical properties of the samples measured by spectroscopic ellipsometry. In a previous work; we concluded that during the postimplantation annealing of a highly damaged SiC crystalline material the short distance order can be recovered; while the long distance disorder remains. We also presented the possibility to have grains of different polytypes oriented faraway from the original direction. Now; this alternative is confirmed by the cross-sectional transmission and high resolution electron microscopy studies; carried out to obtain information about the crystal structure. © 2006 American Institute of Physics;
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