Effect of SiO2 Tunnel oxide thickness on electron tunneling mechanism in Si nanocrystal dots floating-gate memories

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Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara 630-0192, Japan [1 ]
不详 [2 ]
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Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap | / 5 A卷 / 3997-3999期
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Floating-gate memory - Si nanocrystal dots - Side-wall PECVD;
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