AlGaN-based deep ultraviolet light-emitting diodes grown on epitaxial AlN/sapphire templates

被引：0
|
作者：
Sumiya, Shigeaki [1 ,2 ]
Zhu, Youhua [1 ]
Zhang, Jicai [1 ]
Kosaka, Kei [2 ]
Miyoshi, Makoto [1 ,2 ]
Shibata, Tomohiko [2 ]
Tanaka, Mitsuhiro [2 ]
Egawa, Takashi [1 ]
机构：
[1] Research Center for Nano-Device and System, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
[2] R and D Division, NGK Insulators Ltd., Suda-cho, Mizuho-ku, Nagoya 467-8530, Japan
来源：
Japanese Journal of Applied Physics | 2008年 / 47卷 / 01期
关键词：
AlGaN films and deep ultraviolet light-emitting diode (UV-LED) structures with AlGaN multi-quantum wells (MQWs) were grown directly on 2-in.-diameter epitaxial AlN/sapphire template (AlN template) by metalorganic chemical vapor deposition (MOCVD). It was confirmed that crack-free and good-crystal-quality AlGaN films and UV-LED structures can be grown on AlN template without the use of any buffer layer technique such as superlattice structures or pulsed atomic layer deposition. This seemed to be mainly due to the in-plane compressive stress caused by using AlN template as underlying substrates. Deep UV-LED devices were successfully fabricated using MOCVD-grown wafers. Electroluminescence spectra for those LEDs exhibited sharp near-band emissions ranging from 265 to 277 nm; depending on their Al compositions in MQWs. It was also confirmed that the insertion of a thin AlN layer between the active region and the p-type cladding layer can drastically suppress a parasitic sub-band emission around 320nm. © 2008 The Japan Society of Applied Physics;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
引用
收藏
页码：43 / 46
相关论文
共 50 条
  • [1] AlGaN-based deep ultraviolet light-emitting diodes grown on epitaxial AIN/sapphire templates
    Sumiya, Shigeaki
    Zhu, Youhua
    Zhang, Jicai
    Kosaka, Kei
    Miyoshi, Makoto
    Shibata, Tomohiko
    Tanaka, Mitsuhiro
    Egawa, Takashi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (01) : 43 - 46
  • [2] AlGaN-based ultraviolet light-emitting diodes on sputter-deposited AlN templates with epitaxial AlN/AlGaN superlattices
    Zhao, Lu
    Zhang, Shuo
    Zhang, Yun
    Yan, Jianchang
    Zhang, Lian
    Ai, Yujie
    Guo, Yanan
    Ni, Ruxue
    Wang, Junxi
    Li, Jinmin
    SUPERLATTICES AND MICROSTRUCTURES, 2018, 113 : 713 - 719
  • [3] AlGaN-based ultraviolet light-emitting diodes grown on AlN epilayers
    Kim, KH
    Fan, ZY
    Khizar, M
    Nakarmi, ML
    Lin, JY
    Jiang, HX
    APPLIED PHYSICS LETTERS, 2004, 85 (20) : 4777 - 4779
  • [4] AlGaN-based ultraviolet light-emitting diodes grown on bulk AlN substrates
    Nishida, T
    Makimoto, T
    Saito, H
    Ban, T
    APPLIED PHYSICS LETTERS, 2004, 84 (06) : 1002 - 1003
  • [5] A Review of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on Sapphire
    Nagasawa, Yosuke
    Hirano, Akira
    APPLIED SCIENCES-BASEL, 2018, 8 (08):
  • [6] AlGaN-Based Deep-Ultraviolet Light Emitting Diodes Fabricated on AlN/sapphire Template
    Sang Li-Wen
    Qin Zhi-Xin
    Fang Hao
    Zhang Yan-Zhao
    Li Tao
    Xu Zheng-Yu
    Yang Zhi-Jian
    Shen Bo
    Zhang Guo-Yi
    Li Shu-Ping
    Yang Wei-Huang
    Chen Hang-Yang
    Liu Da-Yi
    Kang Jun-Yong
    CHINESE PHYSICS LETTERS, 2009, 26 (11)
  • [7] AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates
    Kim, Myunghee
    Fujita, Takehiko
    Fukahori, Shinya
    Inazu, Tetsuhiko
    Pernot, Cyril
    Nagasawa, Yosuke
    Hirano, Akira
    Ippommatsu, Masamichi
    Iwaya, Motoaki
    Takeuchi, Tetsuya
    Kamiyama, Satoshi
    Yamaguchi, Masahito
    Honda, Yoshio
    Amano, Hiroshi
    Akasaki, Isamu
    APPLIED PHYSICS EXPRESS, 2011, 4 (09)
  • [8] AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes
    Hirayama, Hideki
    Kamata, Norihiko
    Tsubaki, Kenji
    III-NITRIDE BASED LIGHT EMITTING DIODES AND APPLICATIONS, 2ND EDITION, 2017, 133 : 267 - 299
  • [9] Growth of High-Quality AlN on Sapphire and Development of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes
    Hirayama, H.
    III-NITRIDE SEMICONDUCTOR OPTOELECTRONICS, 2017, 96 : 85 - 120
  • [10] Improved performance of AlGaN-based deep ultraviolet light-emitting diodes with nano-patterned AlN/sapphire substrates
    Lee, Donghyun
    Lee, Jong Won
    Jang, Jeonghwan
    Shin, In-Su
    Jin, Lu
    Park, Jun Hyuk
    Kim, Jungsub
    Lee, Jinsub
    Noh, Hye-Seok
    Kim, Yong-Il
    Park, Youngsoo
    Lee, Gun-Do
    Park, Yongjo
    Kim, Jong Kyu
    Yoon, Euijoon
    APPLIED PHYSICS LETTERS, 2017, 110 (19)
12345