AlGaN-based deep ultraviolet light-emitting diodes grown on epitaxial AlN/sapphire templates

被引：0

作者：

Sumiya, Shigeaki ^{[1
,2
]}

Zhu, Youhua ^{[1
]}

Zhang, Jicai ^{[1
]}

Kosaka, Kei ^{[2
]}

Miyoshi, Makoto ^{[1
,2
]}

Shibata, Tomohiko ^{[2
]}

Tanaka, Mitsuhiro ^{[2
]}

Egawa, Takashi ^{[1
]}

机构：

[1] Research Center for Nano-Device and System, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan

[2] R and D Division, NGK Insulators Ltd., Suda-cho, Mizuho-ku, Nagoya 467-8530, Japan

来源：

Japanese Journal of Applied Physics | 2008年 / 47卷 / 01期

关键词：

AlGaN films and deep ultraviolet light-emitting diode (UV-LED) structures with AlGaN multi-quantum wells (MQWs) were grown directly on 2-in.-diameter epitaxial AlN/sapphire template (AlN template) by metalorganic chemical vapor deposition (MOCVD). It was confirmed that crack-free and good-crystal-quality AlGaN films and UV-LED structures can be grown on AlN template without the use of any buffer layer technique such as superlattice structures or pulsed atomic layer deposition. This seemed to be mainly due to the in-plane compressive stress caused by using AlN template as underlying substrates. Deep UV-LED devices were successfully fabricated using MOCVD-grown wafers. Electroluminescence spectra for those LEDs exhibited sharp near-band emissions ranging from 265 to 277 nm; depending on their Al compositions in MQWs. It was also confirmed that the insertion of a thin AlN layer between the active region and the p-type cladding layer can drastically suppress a parasitic sub-band emission around 320nm. © 2008 The Japan Society of Applied Physics;

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摘要：

Journal article (JA)

引用

页码：43 / 46

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