AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates

被引：86

作者：

Kim, Myunghee ^{[1
]}

Fujita, Takehiko ^{[1
]}

Fukahori, Shinya ^{[1
]}

Inazu, Tetsuhiko ^{[1
]}

Pernot, Cyril ^{[1
]}

Nagasawa, Yosuke ^{[1
]}

Hirano, Akira ^{[1
]}

Ippommatsu, Masamichi ^{[1
]}

Iwaya, Motoaki ^{[2
]}

Takeuchi, Tetsuya ^{[2
]}

Kamiyama, Satoshi ^{[2
]}

Yamaguchi, Masahito ^{[3
]}

Honda, Yoshio ^{[3
]}

Amano, Hiroshi ^{[3
]}

Akasaki, Isamu ^{[2
]}

机构：

[1] Meijo Univ, UV Craftory Co Ltd, Nagoya, Aichi 4680073, Japan

[2] Meijo Univ, Fac Sci & Technol, Nagoya, Aichi 4688502, Japan

[3] Nagoya Univ, Grad Sch Engn, Dept Elect Engn & Comp Sci, Nagoya, Aichi 4648603, Japan

来源：

APPLIED PHYSICS EXPRESS | 2011年 / 4卷 / 09期

关键词：

ALN LAYERS;

D O I：

10.1143/APEX.4.092102

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Deep ultraviolet (DUV) light-emitting diodes (LEDs) on patterned sapphire substrates (PSSs) have been clearly demonstrated. AlN templates grown on PSSs had average threading dislocation densities (TDDs) of as low as 5 x 10(7) cm(-2). Flip-chip DUV LEDs fabricated on PSSs demonstrated a significantly high performance. The 266nm LED exhibited an output power of 5.3mW and an external quantum efficiency (EQE) of 1.9% at 60mA DC, and the 278nm LED had 8.4mW output and an EQE of 3.4%. Moreover, the 70% lifetime was more than 700 h at 20 mA. (C) 2011 The Japan Society of Applied Physics

引用

页数：3

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