Three-dimensional silicon integration

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作者
Knickerbocker, John U. [1 ]
Andry, Paul S. [1 ]
Dang, Bing [1 ]
Horton, Raymond R. [1 ]
Interrante, Mario J. [2 ]
Patel, Chirag S. [1 ]
Polastre, Robert J. [1 ]
Sakuma, Katsuyuki [3 ]
Sirdeshmukh, Ranjani [1 ]
Sprogis, Edmund J. [4 ]
Sri-Jayantha, Sri M. [1 ]
Stephens, Antonio M. [5 ]
Topol, Anna W. [1 ]
Tsang, Cornelia K. [1 ]
Webb, Bucknell C. [1 ]
Wright, Steven L. [1 ]
机构
[1] IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598, United States
[2] IBM Systems and Technology Group, Microelectronics Division, 2070 Route 52, Hopewell Junction, NY 12533, United States
[3] IBM Research Division, IBM Tokyo Research Laboratory, 1623-14 Shimo-isuruma, Yamato-shi, Kanagawa-ken 242-8502, Japan
[4] IBM Systems and Technology Group, 1000 River Street, Essex Junction, VT 05452, United States
[5] IBM Research Division, 11501 Burnet Road, Austin, TX 78758, United States
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Three-dimensional (3D) silicon integration of active devices with through-silicon vias (TSVs); thinned silicon; and silicon-to-silicon fine-pitch interconnections offers many product benefits. Advantages of these emerging 3D silicon integration technologies can include the following: power efficiency; performance enhancements; significant product miniaturization; cost reduction; and modular design for improved time to market. IBM research activities are aimed at providing design rules; structures; and processes that make 3D technology manufacturable for chips used in actual products on the basis of data from test-vehicle (i.e; prototype); design; fabrication; and characterization demonstrations. Three-dimensional integration can be applied to a wide range of interconnection densities (2 to 108/cm2); requiring new architectures for product optimization and multiple options for fabrication. Demonstration test structures; which are designed; fabricated; and characterized; are used to generate experimental data; establish models and design guidelines; and help define processes for future product consideration. This paper 1) reviews technology integration from a historical perspective; 2) describes industry-wide progress in 3D technology with examples of TSV and silicon-silicon interconnection advancement over the last 10 years; 3) highlights 3D technology from IBM; including demonstration test vehicles used to develop ground rules; collect data; and evaluate reliability; and 4) provides examples of 3D emerging industry product applications that could create marketable systems. Copyright 2008 by International Business Machines Corporation;
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页码:553 / 569
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