Modeling of processes of gettering the generation-recombination centers in silicon at diffusion of phosphorus and boron

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National University of Science and Technology MISiS, 4 Leninsky av., Moscow [1 ]
119049, Russia
不详 [2 ]
111538, Russia
不详 [3 ]
119454, Russia
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Appl. Phys. | / 5卷 / 15-20期
关键词：
Phosphorus - Borosilicate glass - Silicon;
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摘要：
The model is applied to a several case, where phosphorus or boron layers gettering is performed Agreement with experimental results is established if the P+-Fe2- ion paires are formed during phosphorus gettering. A borosilicate glass layer is the gettering site during boron gettering. The model predicts the effectivity for gettering according to the process parameters.
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