Micro thermal shear stress sensor based on vacuum anodic bonding and bulk-micromachining

被引：2
|
作者：
Silicon Device and Integrated Technology Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China [1 ]
不详 [2 ]
机构：
来源：
Chin. Phys | 2008年 / 6卷 / 2130-2136期
关键词：
Silicon nitride;
D O I：
10.1088/1674-1056/17/6/031
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学科分类号：
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