HfxZr1-xO2 Solid Solution Nanoclusters with Size-Specific Bandgaps

被引:0
|
作者
Guan, Xiaoyi [1 ]
Thomas, Joseph P. [1 ]
Zhang, Lei [1 ]
Farkhondeh, Hanieh [1 ]
Leung, Kam Tong [1 ]
机构
[1] WATLab and Department of Chemistry, University of Waterloo, 200 University Avenue W., Waterloo,ON,N2L 3G1, Canada
来源
Journal of Physical Chemistry C | 2024年 / 128卷 / 46期
基金
加拿大自然科学与工程研究理事会;
关键词
Aggregation techniques - Bimetallic oxides - Chemical state - Core shell - Cristallinity - Deposition conditions - Ferroelectric property - Gas-phases - Orthorhombic phase - Single-crystalline;
D O I
10.1021/acs.jpcc.4c04096
中图分类号
学科分类号
摘要
Combining zirconia and hafnia into a bimetallic oxide such as HZO (Hf0.5Zr0.5O2) has attracted a lot of interest because the introduction of a novel orthorhombic phase with intrinsic polarization in HZO has led to strong ferroelectric properties. Here, we use a gas-phase aggregation technique to produce size-specific HfxZr1-xO2 (x 10 nm. For the single-crystalline HfxZr1-xO2 NCs, we observe, for the first time for NCs, the special orthorhombic (Pbc21) structure found previously only in the HZO film prepared under extreme conditions. The measured bandgaps of these NCs are found to increase with the cluster size, in contrast to the increase in the bandgap with decreasing size generally found in NCs. The X-ray photoelectron spectra clearly show, in the Zr 3d region, components that can be attributed to oxygen vacancy defects and the substitution of Hf for Zr in the lattice. A new model involving Hf-induced electron polarization is proposed to describe the physical and electronic structures of these novel bimetallic hybrid oxide NCs. This work establishes a general formation protocol for other hybrid semiconductor NCs, while the HfxZr1-xO2 (x © 2024 American Chemical Society.
引用
下载
收藏
页码:19786 / 19794
相关论文
共 50 条
  • [11] Flexible HfxZr1-xO2 Thin Films on Polyimide for Energy Storage With High Flexibility
    Chen, Yuting
    Yang, Yang
    Yuan, Peng
    Jiang, Pengfei
    Xu, Yannan
    Lv, Shuxian
    Ding, Yaxin
    Dang, Zhiwei
    Gong, Tiancheng
    Wang, Yan
    Luo, Qing
    IEEE ELECTRON DEVICE LETTERS, 2022, 43 (06) : 930 - 933
  • [12] Thermodynamic control of ferroelectric-phase formation in HfxZr1-xO2 and ZrO2
    Shibayama, Shigehisa
    Nishimura, Tomonori
    Migita, Shinji
    Toriumi, Akira
    JOURNAL OF APPLIED PHYSICS, 2018, 124 (18)
  • [13] Improved Endurance of Ferroelectric HfxZr1-xO2 Integrated on InAs Using Millisecond Annealing
    Athle, Robin
    Blom, Theodor
    Irish, Austin
    Persson, Anton E. O.
    Wernersson, Lars-Erik
    Timm, Rainer
    Borg, Mattias
    ADVANCED MATERIALS INTERFACES, 2022, 9 (27)
  • [14] Characteristics of atomic-layer-deposited thin HfxZr1-xO2 gate dielectrics
    Triyoso, D. H.
    Hegde, R. I.
    Schaeffer, J. K.
    Gregory, R.
    Wang, X.-D.
    Canonico, M.
    Roan, D.
    Hebert, E. A.
    Kim, K.
    Jiang, J.
    Rai, R.
    Kaushik, V.
    Samavedam, S. B.
    Rochat, N.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2007, 25 (03): : 845 - 852
  • [15] Composition-Dependent Ferroelectric Properties in Sputtered HfXZr1-XO2 Thin Films
    Luo, Qing
    Ma, Haili
    Su, Hailei
    Xue, Kan-Hao
    Cao, Rongrong
    Gao, Zhaomeng
    Yu, Jie
    Gong, Tiancheng
    Xu, Xiaoxin
    Yin, Jiahao
    Yuan, Peng
    Tai, Lu
    Dong, Danian
    Long, Shibing
    Liu, Qi
    Miao, Xiang-Shui
    Lv, Hangbing
    Liu, Ming
    IEEE ELECTRON DEVICE LETTERS, 2019, 40 (04) : 570 - 573
  • [16] HfxZr1-xO2 compositional control using co-injection atomic layer deposition
    Consiglio, Steven
    Tapily, Kandabara
    Clark, Robert D.
    Nakamura, Genji
    Wajda, Cory S.
    Leusink, Gert J.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2013, 31 (01):
  • [17] A Novel Combinatorial Approach to the Ferroelectric Properties in HfxZr1-xO2 Deposited by Atomic Layer Deposition
    Jung, Yong Chan
    Mohan, Jaidah
    Hwang, Su Min
    Kim, Jin-Hyun
    Le, Dan N.
    Sahota, Akshay
    Kim, Namhoon
    Hernandez-Arriaga, Heber
    Veyan, Jean-Francois
    Kim, Harrison Sejoon
    Kim, Si Joon
    Choi, Rino
    Kim, Jiyoung
    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2021, 15 (05):
  • [18] High Endurance and Low Fatigue Effect of Bilayer Stacked Antiferroelectric/Ferroelectric HfxZr1-xO2
    Lo, Chieh
    Chen, Chung-Kuang
    Chang, Chen-Fen
    Zhang, Feng-Shuo
    Lu, Zong-Han
    Chao, Tien-Sheng
    IEEE ELECTRON DEVICE LETTERS, 2022, 43 (02) : 224 - 227
  • [19] Effect of thickness and surface composition on the stability of polarization in ferroelectric HfxZr1-xO2 thin films
    Acosta, Adrian
    Martirez, J. Mark P.
    Lim, Norleakvisoth
    Chang, Jane P.
    Carter, Emily A.
    PHYSICAL REVIEW MATERIALS, 2023, 7 (12)
  • [20] Tailoring of Ferroelectric Coercive Field and Polarization with Ferroelectric and Antiferroelectric HfxZr1-xO2 Bilayer Structure
    Park, Geon
    Nguyen, An H.
    Nguyen, Manh-Cuong
    Nguyen, Anh-Duy
    Kim, Hyunsoo
    Kim, Jaekyeong
    Hwang, Kyungsoo
    Shin, Hoyeon
    Song, Siun
    Choi, Rino
    IEEE Electron Device Letters, 2024, 45 (10) : 1997 - 2000