Flexible HfxZr1-xO2 Thin Films on Polyimide for Energy Storage With High Flexibility

被引：10
|
作者：
Chen, Yuting [1 ,2 ]
Yang, Yang [1 ,2 ]
Yuan, Peng [1 ,2 ]
Jiang, Pengfei [1 ,2 ]
Xu, Yannan [1 ,2 ]
Lv, Shuxian [1 ,2 ]
Ding, Yaxin [1 ,2 ]
Dang, Zhiwei [1 ,2 ]
Gong, Tiancheng [1 ,2 ]
Wang, Yan [1 ,2 ]
Luo, Qing [1 ,3 ,4 ]
机构：
[1] Chinese Acad Sci, Inst Microelect, Key Lab Microelect Device & Integrated Technol, Beijing 100029, Peoples R China
[2] Univ Chinese Acad Sci, Sch Integrated Circuits, Beijing 101408, Peoples R China
[3] Peng Cheng Lab, Dept Math & Theories, Shenzhen, Peoples R China
[4] Fudan Univ, Zhangjiang Fudan Int Innovat Ctr, Shanghai 200433, Peoples R China
来源：
IEEE ELECTRON DEVICE LETTERS | 2022年 / 43卷 / 06期
基金：
中国国家自然科学基金;
关键词：
Flexible; antiferroelectric; HfO2-based; energy-storage capacitor; PERFORMANCE;
D O I：
10.1109/LED.2022.3171273
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Flexible energy-storage capacitor has attracted great interest on account of the rapid development of the combination of intelligent systems and flexible electronics. In this work, we fabricated flexible energy-storage capacitors by depositing HfxZr1-xO2 thin films on polyimide (PI) substrates using atomic layer deposition (ALD). The flexible capacitors exhibit high energy storage density (ESD approximate to 35.4 J/cm(3)) and efficiency (eta approximate to 69.3%). Furthermore, ESD and eta remained stable even bending 5000 cycles with a radius of 2 mm. This work provide reference for the development of high-performance flexible HfO2-based energy storage devices.
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页码：930 / 933
页数：4
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