Emergent Symmetry and Valley Chern Insulator in Twisted Double-Bilayer Graphene

被引:0
|
作者
Wang, Yimeng [1 ]
Burg, G. William [1 ]
Lian, Biao [2 ]
Watanabe, Kenji [3 ]
Taniguchi, Takashi [4 ]
Bernevig, B. Andrei [5 ]
Tutuc, Emanuel [1 ]
机构
[1] Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin,TX,78758, United States
[2] Princeton Center for Theoretical Science, Princeton University, Princeton,NJ,08544, United States
[3] Research Center for Functional Materials, National Institute of Materials Science, 1-1 Namiki Tsukuba, Ibaraki,305-0044, Japan
[4] International Center for Materials Nanoarchitectonics, National Institute of Materials Science, 1-1 Namiki Tsukuba, Ibaraki,305-0044, Japan
[5] Department of Physics, Princeton University, Princeton,NJ,08544, United States
关键词
All Open Access; Green;
D O I
10.1103/PhysRevLett.133.246401
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51
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