Emergent Symmetry and Valley Chern Insulator in Twisted Double-Bilayer Graphene

被引:0
|
作者
Wang, Yimeng [1 ]
Burg, G. William [1 ]
Lian, Biao [2 ]
Watanabe, Kenji [3 ]
Taniguchi, Takashi [4 ]
Bernevig, Andrei [5 ]
Tutuc, Emanuel [1 ]
机构
[1] Univ Texas Austin, Microelect Res Ctr, Dept Elect & Comp Engn, Austin, TX 78758 USA
[2] Princeton Univ, Princeton Ctr Theoret Sci, Princeton, NJ 08544 USA
[3] Natl Inst Mat Sci, Res Ctr Funct Mat, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan
[4] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan
[5] Princeton Univ, Dept Phys, Princeton, NJ 08544 USA
基金
美国国家科学基金会;
关键词
UNCONVENTIONAL SUPERCONDUCTIVITY; TOPOLOGICAL-INSULATOR; CORRELATED STATES; BEHAVIOR;
D O I
10.1103/PhysRevLett.133.246401
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Theoretical calculations show that twisted double bilayer graphene (TDBG) under a transverse electric field develops a valley Chern number 2 at charge neutrality. Using thermodynamic and thermal activation measurements we report the experimental observation of a universal closing of the charge neutrality gap in the Hofstadter spectrum of TDBG at 1/2 magnetic flux per unit cell, in agreement with theoretical predictions for a valley Chern number 2 gap. Our theoretical analysis of the experimental data shows that the interaction energy, while larger than the flat-band bandwidth in TDBG near 1 degrees does not alter the emergent valley symmetry or the single-particle band topology.
引用
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页数:7
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