50-V GaN HEMTs suit high-power amps

被引：0
|
作者：
O'Shea, Paul
机构：
来源：
Electronic Products | 2014年 / 56卷 / 09期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] Quasi-monolithic integration of high-power GaN-based HEMTs for high-frequency applications
    Kricke, Alexander
    Joodaki, Mojtaba
    Dharmarasu, Nethaji
    Kompa, Guenter
    Hillmer, Hartmut
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2007, 22 (11) : 1245 - 1248
  • [42] Power Layout Design of a GaN HEMTs-Based High-Power High-Efficiency Three-Level ANPC Inverter for 800 V DC Bus System
    Satpathy, Subhransu
    Das, Partha Pratim
    Bhattacharya, Subhashish
    IEEE Journal of Emerging and Selected Topics in Industrial Electronics, 2024, 5 (02): : 565 - 576
  • [43] Impacts of diamond heat spreader on the thermo-mechanical characteristics of high-power AlGaN/GaN HEMTs
    Zhang, R.
    Zhao, W. S.
    Yin, W. Y.
    Zhao, Z. G.
    Zhou, H. J.
    DIAMOND AND RELATED MATERIALS, 2015, 52 : 25 - 31
  • [44] Activation energy of drain-current degradation in GaN HEMTs under high-power DC stress
    Wu, Yufei
    Chen, Chia-Yu
    del Alamo, Jesus A.
    MICROELECTRONICS RELIABILITY, 2014, 54 (12) : 2668 - 2674
  • [45] Anomalous Source-Side Degradation of InAlN/GaN HEMTs Under High-Power Electrical Stress
    Wu, Yufei
    Sasangka, W. A.
    del Alamo, Jesus A.
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 64 (11) : 4435 - 4441
  • [46] High-Power Microwave GaN/AlGaN HEMTs and MMICs on SiC and Silicon Substrates for Modern Radio Communication
    Quay, Ruediger
    Schwantuschke, Dirk
    Ture, Erdin
    van Raay, Friedbert
    Friesicke, Christian
    Krause, Sebastian
    Mueller, Stefan
    Breuer, Steffen
    Godejohann, Birte
    Brueckner, Peter
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2018, 215 (09):
  • [47] A 50-V 50-MHz High-Noise-Immunity Capacitive-Coupled Level Shifter With Digital Noise Blanker for GaN Drivers
    Qin, Yao
    Ming, Xin
    Lin, Zhiyi
    Ye, Zikai
    Shi, Jiawei
    Zhuang, Chunwang
    Li, Zhaoji
    Zhang, Bo
    IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2023, 70 (05) : 2215 - 2227
  • [48] High power AlGaN/GaN HEMTs for microwave applications
    Wu, YF
    Keller, BP
    Keller, S
    Kapolnek, D
    Kozodoy, P
    Denbaars, SP
    Mishra, UK
    SOLID-STATE ELECTRONICS, 1997, 41 (10) : 1569 - 1574
  • [49] A high-gain high-power amplifier MMIC for V-band applications using 100 nm AlGaN/GaN dual-gate HEMTs
    Schwantuschke, Dirk
    Haupt, Christian
    Kiefer, Rudolf
    Brueckner, Peter
    Seelmann-Eggebert, Matthias
    Tessmann, Axel
    Mikulla, Michael
    Kallfass, Ingmar
    Quay, Ruediger
    INTERNATIONAL JOURNAL OF MICROWAVE AND WIRELESS TECHNOLOGIES, 2012, 4 (03) : 267 - 274
  • [50] High power AlGaN/GaN HEMTs for microwave applications
    Univ of California, Santa Barbara, United States
    Solid State Electron, 10 (1569-1574):
12345