50-V GaN HEMTs suit high-power amps

被引:0
|
作者
O'Shea, Paul
机构
来源
Electronic Products | 2014年 / 56卷 / 09期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
下载
收藏
相关论文
共 50 条
  • [21] Failure signatures on 0.25 μm GaN HEMTs for high-power RF applications
    Stocco, A.
    Dalcanale, S.
    Rampazzo, F.
    Meneghini, M.
    Meneghesso, G.
    Gruenenpuett, J.
    Lambert, B.
    Blanck, H.
    Zanoni, E.
    MICROELECTRONICS RELIABILITY, 2014, 54 (9-10) : 2237 - 2241
  • [22] Stability of AlGaN/GaN high-power HEMTs under DC and RF stresses
    Zhang, AP
    Kaminsky, EB
    Allen, AF
    Hedrick, JW
    Vertiatchikh, A
    Eastman, LF
    ELECTRONICS LETTERS, 2004, 40 (19) : 1229 - 1230
  • [23] HIGH-POWER V-BAND ALINAS/GAINAS ON INP HEMTS
    MATLOUBIAN, M
    BROWN, AS
    NGUYEN, LD
    MELENDES, MA
    LARSON, LE
    DELANEY, MJ
    PENCE, JE
    RHODES, RA
    THOMPSON, MA
    HENIGE, JA
    IEEE ELECTRON DEVICE LETTERS, 1993, 14 (04) : 188 - 189
  • [24] High-power and high-efficiency AlGaN/GaN HEMT operated at 50 V drain bias voltage
    Kikkawa, T
    Nagahara, M
    Adachi, N
    Yokokawa, S
    Kato, S
    Yokoyama, M
    Kanamura, M
    Yamaguchi, Y
    Hara, N
    Joshin, K
    2003 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS, 2003, : 167 - 170
  • [25] ADVANCED 50-V HIGH-SIDE SWITCH TECHNOLOGY
    CHANG, M
    YILMAZ, H
    GAUFFREAU, G
    HSHIEH, I
    HODGINS, R
    WRATHALL, R
    OWYANG, K
    PATTANAYAK, D
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (11) : 2360 - 2361
  • [26] Wideband high-power high-efficiency amplifiers with GaN HEMTs for base station applications
    Akiyama, Akira
    Wong, James
    Grebennikov, Andrei
    Watanabe, Naoki
    Deguchi, Hiroaki
    Ebihara, Kaname
    SEI Technical Review, 2019, (89): : 26 - 30
  • [27] Impact of high-power stress on dynamic ON-resistance of high-voltage GaN HEMTs
    Jin, Donghyun
    del Alamo, Jesus A.
    MICROELECTRONICS RELIABILITY, 2012, 52 (12) : 2875 - 2879
  • [28] Paralleling 650 V/60 A GaN HEMTs for High Power High Efficiency Applications
    Haryani, Nidhi
    Wang, Jun
    Burgos, Rolando
    2017 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2017, : 3663 - 3668
  • [29] Semiconductor advances propel high-power amps
    Bindra, Ashok
    MICROWAVES & RF, 2008, 47 (07) : 33 - +
  • [30] InAlN/GaN HEMTs based L-band high-power packaged amplifiers
    Jardel, Olivier
    Jacquet, Jean-Claude
    Baczkowski, Leny
    Carisetti, Dominique
    Lancereau, Didier
    Olivier, Maxime
    Aubry, Raphael
    Poisson, Marie-Antoinette di Forte
    Dua, Christian
    Piotrowicz, Stephane
    Delage, Sylvain L.
    INTERNATIONAL JOURNAL OF MICROWAVE AND WIRELESS TECHNOLOGIES, 2014, 6 (06) : 565 - 572