Estimating the junction temperature of InGaN and AlGaInP light-emitting diodes

被引：0
|
作者：
Lee, Ya-Ju [1 ]
Lee, Chia-Jung [1 ]
Chen, Chih-Hao [1 ]
机构：
[1] Institute of Electro-Optical Science and Technology, National Taiwan Normal University, Taipei 116, Taiwan
来源：
Japanese Journal of Applied Physics | 2011年 / 50卷 / 4 PART 2期
基金：
中国国家自然科学基金;
关键词：
Compilation and indexing terms; Copyright 2025 Elsevier Inc;
D O I：
04DG18
中图分类号：
学科分类号：
摘要：
Semiconductor alloys - Aluminum alloys - III-V semiconductors - Light emitting diodes - Semiconductor junctions - Indium alloys - Gallium alloys
引用
下载
收藏
相关论文
共 50 条
  • [21] Temperature-dependent light-emitting characteristics of InGaN/GaN diodes
    Liu, Jun
    Tam, W. S.
    Wong, H.
    Filip, V.
    MICROELECTRONICS RELIABILITY, 2009, 49 (01) : 38 - 41
  • [22] A Comparative Study for the Junction Temperature of Green Light-Emitting Diodes
    Ozluk, Burak
    Muslu, A. Mete
    Arik, Mehmet
    IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY, 2019, 9 (10): : 2024 - 2035
  • [23] Investigations of disorder in InGaN light-emitting diodes
    Pophristic, M
    Lukacs, SJ
    Long, FH
    Tran, C
    Ferguson, IT
    LIGHT-EMITTING DIODES: RESEARCH, MANUFACTURING, AND APPLICATIONS IV, 2000, 3938 : 105 - 112
  • [24] Junction temperature in light-emitting diodes assessed by different methods
    Chhajed, S
    Xi, Y
    Gessmann, T
    Xi, JQ
    Shah, JM
    Kim, JK
    Schubert, EF
    LIGHT-EMITTING DIODES: RESEARCH, MANUFACTURING, AND APPLICATIONS IX, 2005, 5739 : 16 - 24
  • [25] Junction temperature estimation for high power Light-Emitting Diodes
    Sa, Edilson Mineiro, Jr.
    Antunes, Fernando L. M.
    Perin, Arnaldo J.
    2007 IEEE INTERNATIONAL SYMPOSIUM ON INDUSTRIAL ELECTRONICS, PROCEEDINGS, VOLS 1-8, 2007, : 3030 - +
  • [26] Tandem InGaN/GaN light-emitting diodes
    Zhu, Binbin
    Liu, Wei
    Zhang, Zi-Hui
    Tan, Swee Tiam
    Sun, Xiao Wei
    Demir, Hilmi Volkan
    2015 PHOTONICS CONFERENCE (IPC), 2015,
  • [27] The effect of junction temperature on the optoelectrical properties of green InGaN/GaN multiple quantum well light-emitting diodes
    Chen, Wei-Jen
    Kuo, Da-Chuan
    Hung, Cheng-Wei
    Ke, Chih-Chun
    Shen, Hui-Tang
    Wang, Jen-Cheng
    Wu, Ya-Fen
    Nee, Tzer-En
    PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES XV, 2007, 6468
  • [28] Lifetime tests and junction-temperature measurement of InGaN light-emitting diodes using patterned sapphire substrates
    Tsai, P. C.
    Chuang, Ricky W.
    Su, Y. K.
    JOURNAL OF LIGHTWAVE TECHNOLOGY, 2007, 25 (02) : 591 - 596
  • [29] On a relationship among optical power, current density, and junction temperature for InGaN-based light-emitting diodes
    Guo, Zi-Quan
    Shih, Tien-Mo
    Peng, Zhang-Bao
    Qiu, Hai-Hua
    Lu, Yi-Jun
    Gao, Yu-Lin
    Zhu, Li-Hong
    Zheng, Jiang-Hui
    Chen, Zhong
    AIP ADVANCES, 2017, 7 (01)
  • [30] AlGaInP-sapphire glue bonded light-emitting diodes
    Chang, SJ
    Su, YK
    Yang, T
    Chang, CS
    Chen, TP
    Huang, KH
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 2002, 38 (10) : 1390 - 1394
12345