Effect of chlorine residue on electrical performance of atomic layer deposited hafnium silicate

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作者：
Sun, Qing-Qing [1 ]
Zhang, Chi [1 ]
Dong, Lin [1 ]
Shi, Yu [1 ]
Ding, Shi-Jin [1 ]
Zhang, David Wei [1 ]
机构：
[1] State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, Shanghai 200433, China
来源：
Journal of Applied Physics | 2008年 / 103卷 / 11期
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