PH Sensitivity of Edge-Gated Graphene Field-Effect Devices with Covalent Edge Functionalization

被引:0
|
作者
Neubert, Tilmann J. [1 ,2 ,3 ]
Krieg, Janina [1 ]
Yadav, Anur [1 ,2 ,3 ]
Balasubramanian, Kannan [1 ,2 ,3 ]
机构
[1] Department of Chemistry, Humboldt-Universität zu Berlin, Berlin,10117, Germany
[2] School of Analytical Sciences Adlershof (SALSA), Humboldt-Universität zu Berlin, Berlin,10117, Germany
[3] IRIS Adlershof, Humboldt-Universität zu Berlin, Berlin,10117, Germany
关键词
Field effect transistors;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:4668 / 4676
相关论文
共 50 条
  • [31] Top-gated graphene field-effect transistors on SiC substrates
    Ma Peng
    Jin Zhi
    Guo JianNan
    Pan HongLiang
    Liu XinYu
    Ye TianChun
    Jia YuPing
    Guo LiWei
    Chen XiaoLong
    CHINESE SCIENCE BULLETIN, 2012, 57 (19): : 2401 - 2403
  • [32] Contact resistance in top-gated graphene field-effect transistors
    Huang, Bo-Chao
    Zhang, Ming
    Wang, Yanjie
    Woo, Jason
    APPLIED PHYSICS LETTERS, 2011, 99 (03)
  • [33] Graphene field-effect transistor using gated ferroelectric thin film
    Alam, Injamul
    Sa, Kadambinee
    Das, Sonali
    Subramanyam, B. V. R. S.
    Subudhi, Subhasri
    Mandal, Manoranjan
    Patra, Santosini
    Samanta, Buddhadev
    Sahu, Rashmi Rekha
    Swain, Sujata
    Mahapatra, Apurba
    Kumar, Pawan
    Mahanandia, Pitamber
    SOLID STATE COMMUNICATIONS, 2021, 340
  • [34] Frequency Response of Graphene Electrolyte-Gated Field-Effect Transistors
    Mackin, Charles
    McVay, Elaine
    Palacios, Tomas
    SENSORS, 2018, 18 (02):
  • [35] Intrinsic rectification in common-gated graphene field-effect transistors
    Haddad, Pierre-Antoine
    Flandre, Denis
    Raskin, Jean-Pierre
    NANO ENERGY, 2018, 43 : 37 - 46
  • [36] Top-gated graphene field-effect transistors on SiC substrates
    MA Peng1
    2 Research & Development Center for Functional Crystals
    Chinese Science Bulletin, 2012, 57 (19) : 2401 - 2403
  • [37] Engineering quantum spin Hall effect in graphene nanoribbons via edge functionalization
    Autes, Gabriel
    Yazyev, Oleg V.
    PHYSICAL REVIEW B, 2013, 87 (24):
  • [38] Effect of edge roughness on electronic transport in graphene nanoribbon channel metal-oxide-semiconductor field-effect transistors
    Basu, D.
    Gilbert, M. J.
    Register, L. F.
    Banerjee, S. K.
    MacDonald, A. H.
    APPLIED PHYSICS LETTERS, 2008, 92 (04)
  • [39] Effect of screening on the sensitivity of field-effect devices used to detect oligonucleotides
    Landheer, D.
    McKinnon, W. R.
    Jiang, W. H.
    Aers, G.
    APPLIED PHYSICS LETTERS, 2008, 92 (25)
  • [40] Field-Effect Tunneling between Quantum Valley Hall Edge States and Topological Transistors Based on Bilayer Graphene
    Feng, Jiajun
    Tan, Hui
    Liu, Jun-Feng
    Wang, Jun
    PHYSICAL REVIEW APPLIED, 2023, 19 (02)