PH Sensitivity of Edge-Gated Graphene Field-Effect Devices with Covalent Edge Functionalization

被引：0
|
作者：
Neubert, Tilmann J. [1 ,2 ,3 ]
Krieg, Janina [1 ]
Yadav, Anur [1 ,2 ,3 ]
Balasubramanian, Kannan [1 ,2 ,3 ]
机构：
[1] Department of Chemistry, Humboldt-Universität zu Berlin, Berlin,10117, Germany
[2] School of Analytical Sciences Adlershof (SALSA), Humboldt-Universität zu Berlin, Berlin,10117, Germany
[3] IRIS Adlershof, Humboldt-Universität zu Berlin, Berlin,10117, Germany
来源：
ACS Applied Electronic Materials | 2022年 / 4卷 / 09期
关键词：
Field effect transistors;
D O I：
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中图分类号：
学科分类号：
摘要：
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页码：4668 / 4676
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