Optical susceptibilities of supported indium tin oxide thin films

被引：0

作者：

Humphrey, Jonathan L. ^{[1
]}

Kuciauskas, Darius ^{[1
,2
]}

机构：

[1] Department of Chemistry, Virginia Commonwealth University, 1001 West Main Street, Richmond, VA 23284-2006

[2] Department of Chemistry and Biochemistry, Rowan University, 201 Mullica Hill Road, Glassboro, NJ 08028

来源：

Journal of Applied Physics | 2006年 / 100卷 / 11期

关键词：

The third-order nonlinear optical susceptibility of indium tin oxide (ITO) thin films on glass substrates; (3); ITO; was determined in the near-IR spectral region using degenerate four wave mixing (DFWM) spectroscopy with 100 fs laser pulses. A DFWM method for measuring thin films on thick substrates was refined for the characterization of films less than 100 nm thick and applied to ∼25 nm thick ITO films. It was found that (3) ITO is purely electronic at 900-1300 nm (11 000-7700 cm-1) and has a value of (2.16±0.18) × 10-18 m2 V-2. The (3) ITO value reaches (3.36±0.28) × 10-18 m2 V-2 at 1500 nm (6700 cm-1) due to two-photon absorption by free carriers (electrons). Ultrafast electron relaxation was also observed. The ∼100 fs lifetime of this process could reflect electron scattering in the conduction band. © 2006 American Institute of Physics;

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Journal article (JA)

引用

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