Hot-carrier reliability and performance study of transistors with variable gate-to-drain/source overlap

被引：0
|
作者：
Devoge, P. [1 ,2 ,3 ]
Aziza, H. [2 ]
Lorenzini, P. [3 ]
Masson, P. [3 ]
Julien, F. [1 ]
Marzaki, A. [1 ]
Malherbe, A. [1 ]
Delalleau, J. [1 ]
Cabout, T. [4 ]
Regnier, A. [1 ]
Niel, S. [4 ]
机构：
[1] STMicroelectronics, Rousset, France
[2] Aix-Marseille University, CNRS, IM2NP UMR 7334, Marseille, France
[3] University of Côte d'Azur, Polytech'Lab UPR UCA 7498, Sophia-Antipolis, France
[4] STMicroelectronics, Crolles, France
来源：
Microelectronics Reliability | 2022年 / 138卷
关键词：
Compendex;
D O I：
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学科分类号：
摘要：
Reliability
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