Hot-carrier reliability and performance study of transistors with variable gate-to-drain/source overlap

被引：0
|
作者：
Devoge, P. [1 ,2 ,3 ]
Aziza, H. [2 ]
Lorenzini, P. [3 ]
Masson, P. [3 ]
Julien, F. [1 ]
Marzaki, A. [1 ]
Malherbe, A. [1 ]
Delalleau, J. [1 ]
Cabout, T. [4 ]
Regnier, A. [1 ]
Niel, S. [4 ]
机构：
[1] STMicroelectronics, Rousset, France
[2] Aix-Marseille University, CNRS, IM2NP UMR 7334, Marseille, France
[3] University of Côte d'Azur, Polytech'Lab UPR UCA 7498, Sophia-Antipolis, France
[4] STMicroelectronics, Crolles, France
来源：
Microelectronics Reliability | 2022年 / 138卷
关键词：
Compendex;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Reliability
引用
收藏
相关论文
共 50 条
  • [21] RELIABILITY EFFECTS ON MOS-TRANSISTORS DUE TO HOT-CARRIER INJECTION
    CHEN, KL
    SALLER, SA
    GROVES, IA
    SCOTT, DB
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1985, 20 (01) : 306 - 313
  • [22] Experimental study of hot-carrier effects in LDMOS transistors
    Versari, R
    Pieracci, A
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (06) : 1228 - 1233
  • [23] RELIABILITY EFFECTS ON MOS-TRANSISTORS DUE TO HOT-CARRIER INJECTION
    CHEN, KL
    SALLER, SA
    GROVES, IA
    SCOTT, DB
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) : 386 - 393
  • [24] Influence of gate-to-source and gate-to-drain recesses on GaAs camel-like gate field-effect transistors
    Jung-Hui Tsai
    You-Ren Wu
    Chung-Cheng Chiang
    Fu-Min Wang
    Wen-Chau Liu
    Semiconductors, 2014, 48 : 1222 - 1225
  • [25] Influence of gate-to-source and gate-to-drain recesses on GaAs camel-like gate field-effect transistors
    Tsai, Jung-Hui
    Wu, You-Ren
    Chiang, Chung-Cheng
    Wang, Fu-Min
    Liu, Wen-Chau
    SEMICONDUCTORS, 2014, 48 (09) : 1222 - 1225
  • [26] Hot-carrier reliability of ultra-thin gate oxide CMOS
    Momose, HS
    Nakamura, S
    Ohguro, T
    Yoshitomi, T
    Morifuji, E
    Morimoto, T
    Katsumata, Y
    Iwai, H
    SOLID-STATE ELECTRONICS, 2000, 44 (11) : 2035 - 2044
  • [27] Gate Overlap Optimization and Performance Variation for Thin-Film Transistors with Source/Drain Edge Waviness
    Jeong, Jaewook
    Hong, Yongtaek
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (03)
  • [28] Effects of drain structures on the hot-carrier degradation of high-voltage LDMOS transistors
    Lee, DW
    Roh, TM
    Kim, J
    Koo, JG
    Nam, KS
    Kim, DY
    Park, HS
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1999, 34 : S542 - S545
  • [29] Hot-carrier reliability in n-MOSFETs used as pass-transistors
    Goguenheim, D
    Bravaix, A
    Vuillaume, D
    Varrot, M
    Revil, N
    Mortini, P
    MICROELECTRONICS AND RELIABILITY, 1998, 38 (04): : 539 - 544
  • [30] Investigation of Hot-Carrier Reliability in Junctionless Polysilicon Thin-Film Transistors
    Lee, Hojoon
    Lee, Junyoung
    Oh, Hyeongwan
    Kim, Jiwon
    Lee, Jeong-Soo
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2017, 17 (05) : 3375 - 3377
12345