Hot-carrier reliability and performance study of transistors with variable gate-to-drain/source overlap

被引：0

作者：

Devoge, P. ^{[1
,2
,3
]}

Aziza, H. ^{[2
]}

Lorenzini, P. ^{[3
]}

Masson, P. ^{[3
]}

Julien, F. ^{[1
]}

Marzaki, A. ^{[1
]}

Malherbe, A. ^{[1
]}

Delalleau, J. ^{[1
]}

Cabout, T. ^{[4
]}

Regnier, A. ^{[1
]}

Niel, S. ^{[4
]}

机构：

[1] STMicroelectronics, Rousset, France

[2] Aix-Marseille University, CNRS, IM2NP UMR 7334, Marseille, France

[3] University of Côte d'Azur, Polytech'Lab UPR UCA 7498, Sophia-Antipolis, France

[4] STMicroelectronics, Crolles, France

来源：

Microelectronics Reliability | 2022年 / 138卷

关键词：

Compendex;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Reliability

引用

共 50 条

[1] Hot-carrier reliability and performance study of transistors with variable gate-to-drain/source overlap
Devoge, P.
Aziza, H.
Lorenzini, P.
Masson, P.
Julien, F.
Marzaki, A.
Malherbe, A.
Delalleau, J.
Cabout, T.
Regnier, A.
Niel, S.
MICROELECTRONICS RELIABILITY, 2022, 138
[2] Gate-to-drain/source overlap and asymmetry effects on hot-carrier generation
Devoge, P.
Aziza, H.
Lorenzini, P.
Masson, P.
Julien, F.
Marzaki, A.
Malherbe, A.
Delalleau, J.
Cabout, T.
Regnier, A.
Niel, S.
2022 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP, IIRW, 2022,
[3] Gate-to-drain capacitance as a monitor for hot-carrier degradation in submicrometer MOSFET's
Ling, CH
PROCEEDINGS OF THE SYMPOSIUM ON SILICON NITRIDE AND SILICON DIOXIDE THIN INSULATING FILMS, 1997, 97 (10): : 101 - 117
[4] MOSFET asymmetry and Gate-Drain/Source overlap effects on hot carrier reliability
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[5] EFFECTS OF THE GATE-TO-DRAIN SOURCE OVERLAP ON MOSFET CHARACTERISTICS
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WU, AT
KO, PK
HU, CM
IEEE ELECTRON DEVICE LETTERS, 1987, 8 (07) : 326 - 328
[6] Effects of gate bias on hot-carrier reliability in drain extended metal-oxide-semiconductor transistors
Wu, K. M.
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Lee, J. R.
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[7] ARRIVING AT A UNIFIED MODEL FOR HOT-CARRIER DEGRADATION IN MOSFETS THROUGH GATE-TO-DRAIN CAPACITANCE MEASUREMENT
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YEOW, YT
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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (12) : 2423 - 2429
[8] Small-signal gate-to-drain capacitance of MOSFET as a diagnostic tool for hot-carrier induced degradation
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MICROELECTRONICS AND RELIABILITY, 1997, 37 (07): : 1021 - 1028
[9] Small-signal gate-to-drain capacitance of MOSFET as a diagnostic tool for hot-carrier induced degradation
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[10] A CAPACITANCE METHOD TO DETERMINE THE GATE-TO-DRAIN SOURCE OVERLAP LENGTH OF MOSFETS
CHAN, TY
WU, AT
KO, PK
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IEEE ELECTRON DEVICE LETTERS, 1987, 8 (06) : 269 - 271

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