Study on Quantum Well Intermixing Induced by Zn Impurities in GaInP/AlGaInP Red Semiconductor Lasers

被引：0
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作者：
He, Tianjiang [1 ,2 ]
Liu, Suping [1 ]
Li, Wei [1 ]
Lin, Nan [1 ,2 ]
Xiong, Cong [1 ]
Ma, Xiaoyu [1 ,2 ]
机构：
[1] National Engineering Research Center for Optoelectronic Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing,100083, China
[2] College of Materials Science and Optoelectronics, University of Chinese Academy of Sciences, Beijing,100049, China
来源：
Guangzi Xuebao/Acta Photonica Sinica | 2024年 / 53卷 / 01期
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摘要：
Zinc oxide
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