Negative longitudinal piezoelectric effect and electric auxetic effect in ferroelectric HfO2 and related fluorite-structure ferroelectrics

被引:0
|
作者
Zhang, Shenglong [1 ]
Zhao, Ling-Xu [2 ,3 ]
Ji, Can [1 ]
Yang, Jia-Yue [2 ,3 ]
Liu, Linhua [2 ,3 ]
机构
[1] Energy Research Institute, Qilu University of Technology, Shandong Academy of Sciences, Jinan,250014, China
[2] School of Energy and Power Engineering, Shandong University, Jinan,250061, China
[3] Institute of Frontier and Interdisciplinary Science, Shandong University, Qingdao,266237, China
关键词
This study was supported by the National Natural Science Foundation of China (Grant No. 52076123); the Shandong Provincial Natural Science Foundation (Grant Nos. ZR2023ZD18 and ZR2024QE499); the Collaborative Innovation Project of Colleges in Jinan (Grant Nos. 2021GXRC045 and 202333013); and the Science; Education & Industry Integration Program of Qilu University of Technology (Grant Nos. 2023PX067 and 2022JBZ02-03). We acknowledge Professor Jian Liu of Shandong University for his kind guidance and help. J.L. was supported by the National Natural Science Foundation of China (Grant No. 11904202);
D O I
10.1063/5.0239212
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [31] The effect of the bottom electrode on ferroelectric tunnel junctions based on CMOS-compatible HfO2
    Goh, Youngin
    Jeon, Sanghun
    NANOTECHNOLOGY, 2018, 29 (33)
  • [32] Sub-Nanosecond Switching of Si:HfO2 Ferroelectric Field-Effect Transistor
    Dahan, Mor Mordechai
    Mulaosmanovic, Halid
    Levit, Or
    Duenkel, Stefan
    Beyer, Sven
    Yalon, Eilam
    NANO LETTERS, 2023, 23 (04) : 1395 - 1400
  • [33] Nonvolatile Field-Effect Transistors Using Ferroelectric-Doped HfO2 Films
    Schroeder, Uwe
    Slesazeck, Stefan
    Mulaosmanovic, Halid
    Mikolajick, Thomas
    FERROELECTRIC-GATE FIELD EFFECT TRANSISTOR MEMORIES: DEVICE PHYSICS AND APPLICATIONS, 2ND EDITION, 2020, 131 : 79 - 96
  • [34] Negative effect of crystallization on the mechanism of laser damage in HfO2/SiO2 multilayer
    Shimadzu Corporation, 1, Nishinokyo-Kuwabaracho, Nakagyo-ku, Kyoto 604-8511, Japan
    不详
    不详
    Conf. Program - MOC: Microoptics Conf., 1600,
  • [35] Negative effect of crystallization on the mechanism of laser damage in a HfO2/SiO2 multilayer
    Tateno, Ryo
    Okada, Hajime
    Otobe, Tomohito
    Kawase, Keigo
    Koga, James K.
    Kosuge, Atsushi
    Nagashima, Keisuke
    Sugiyama, Akira
    Kashiwagi, Kunihiro
    JOURNAL OF APPLIED PHYSICS, 2012, 112 (12)
  • [36] Characteristics of Al/SrBi2Ta2O9/HfO2/Si structure using HfO2 as buffer layer for ferro electric-gate field effect transistors
    Roy, A.
    Dhar, A.
    Ray, S. K.
    PROCEEDINGS OF THE 2007 INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES: IWPSD-2007, 2007, : 103 - 106
  • [37] Irradiation Effect of HfO2 MOS Structure under Gamma-ray
    Cheng, Yonghong
    Ding, Man
    Wu, Xinglong
    Liu, Xin
    Wu, Kai
    PROCEEDINGS OF THE 2013 IEEE INTERNATIONAL CONFERENCE ON SOLID DIELECTRICS (ICSD 2013), VOLS 1 AND 2, 2013, : 764 - 767
  • [38] Effect of O2- migration in Pt/HfO2/Ti/Pt structure
    Maxime Thammasack
    Giovanni De Micheli
    Pierre-Emmanuel Gaillardon
    Journal of Electroceramics, 2017, 39 : 137 - 142
  • [39] Effect of O2- migration in Pt/HfO2/Ti/Pt structure
    Thammasack, Maxime
    De Micheli, Giovanni
    Gaillardon, Pierre-Emmanuel
    JOURNAL OF ELECTROCERAMICS, 2017, 39 (1-4) : 137 - 142
  • [40] A Study on the Temperature-Dependent Operation of Fluorite-Structure-Based Ferroelectric HfO2 Memory FeFET: A Temperature-Modulated Operation
    Ali, T.
    Kuehnel, K.
    Czernohorsky, M.
    Mart, C.
    Rudolph, M.
    Paetzold, B.
    Lederer, M.
    Olivo, R.
    Lehninger, D.
    Mueller, F.
    Hoffmann, R.
    Metzger, J.
    Binder, R.
    Steinke, P.
    Kaempfe, T.
    Mueller, J.
    Seidel, K.
    Eng, L. M.
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67 (07) : 2793 - 2799