Negative longitudinal piezoelectric effect and electric auxetic effect in ferroelectric HfO2 and related fluorite-structure ferroelectrics

被引：0
|
作者：
Zhang, Shenglong [1 ]
Zhao, Ling-Xu [2 ,3 ]
Ji, Can [1 ]
Yang, Jia-Yue [2 ,3 ]
Liu, Linhua [2 ,3 ]
机构：
[1] Energy Research Institute, Qilu University of Technology, Shandong Academy of Sciences, Jinan,250014, China
[2] School of Energy and Power Engineering, Shandong University, Jinan,250061, China
[3] Institute of Frontier and Interdisciplinary Science, Shandong University, Qingdao,266237, China
来源：
Applied Physics Letters | 2024年 / 125卷 / 20期
关键词：
This study was supported by the National Natural Science Foundation of China (Grant No. 52076123); the Shandong Provincial Natural Science Foundation (Grant Nos. ZR2023ZD18 and ZR2024QE499); the Collaborative Innovation Project of Colleges in Jinan (Grant Nos. 2021GXRC045 and 202333013); and the Science; Education & Industry Integration Program of Qilu University of Technology (Grant Nos. 2023PX067 and 2022JBZ02-03). We acknowledge Professor Jian Liu of Shandong University for his kind guidance and help. J.L. was supported by the National Natural Science Foundation of China (Grant No. 11904202);
D O I：
10.1063/5.0239212
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] First-principles study of thermal transport properties in ferroelectric HfO2 and related fluorite-structure ferroelectrics
    Zhang, Shenglong
    Yi, Shilei
    Yang, Jia-Yue
    Liu, Jian
    Liu, Linhua
    PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2023, 25 (26) : 17257 - 17263
  • [2] Electrocaloric Effect in Emerging Fluorite-Structure Ferroelectrics
    Yang, Kun
    Park, Ju Yong
    Lee, Dong Hyun
    Park, Min Hyuk
    KOREAN JOURNAL OF MATERIALS RESEARCH, 2020, 30 (09): : 480 - 488
  • [3] Origin of the negative longitudinal piezoelectric effect and electric auxetic effect in hexagonal AIBIVCV semiconductors
    Zhao, Ling-Xu
    Liu, Jian
    PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2023, 25 (28) : 19058 - 19065
  • [4] Spin Hall effect in doped ferroelectric HfO2
    Zhang, Qin
    Chen, Xu
    Yu, Yue
    Li, Huinan
    Dou, Mingbo
    Gurung, G.
    Wang, Xianjie
    Tao, L. L.
    APPLIED PHYSICS LETTERS, 2024, 125 (03)
  • [5] The Effect of Inter Layers on the Ferroelectric Undoped HfO2 Formation
    Tanuma, Masakazu
    Shin, Joong-Won
    Ohmi, Shun-ichiro
    IEICE TRANSACTIONS ON ELECTRONICS, 2022, E105C (10) : 584 - 588
  • [6] Effect of annealing on the composition and structure of HfO2 and nitrogen-incorporated HfO2
    Yeo, CC
    Joo, MS
    Cho, BJ
    Whang, SJ
    THIN SOLID FILMS, 2004, 462 (SPEC. ISS.) : 90 - 95
  • [7] Negative capacitance phenomena depending on the wake-up effect in the ferroelectric Si:HfO2 film
    Park, Sanghyun
    Chun, Min Chul
    Park, Solmin
    Park, Ga-yeon
    Jung, Moonyoung
    Noh, Youngji
    Ahn, Seung-Eon
    Kang, Bo Soo
    CURRENT APPLIED PHYSICS, 2019, 19 (03) : 347 - 350
  • [8] Magnetoelectric Effect at the Ni/HfO2 Interface Induced by Ferroelectric Polarization
    Yang, Qiong
    Tao, Lingling
    Jiang, Zhen
    Zhou, Yichun
    Tsymbal, Evgeny Y.
    Alexandrov, Vitaly
    PHYSICAL REVIEW APPLIED, 2019, 12 (02)
  • [9] Effect of electric field on defect generation and migration in HfO2
    Strand, Jack W.
    Cottom, Jonathon
    Larcher, Luca
    Shluger, Alexander L.
    PHYSICAL REVIEW B, 2020, 102 (01)
  • [10] Ferroelectric field-effect transistors based on HfO2: a review
    Mulaosmanovic, Halid
    Breyer, Evelyn T.
    Dunkel, Stefan
    Beyer, Sven
    Mikolajick, Thomas
    Slesazeck, Stefan
    NANOTECHNOLOGY, 2021, 32 (50)
12345