Reactive ion etching of indium nitride using CH4 and H2 gases

被引：0

作者：

Gou, Qixin ^{[1
]}

Matsuse, Motoatsu ^{[1
]}

Nishio, Mitsuhiro ^{[1
]}

Ogawa, Hiroshi ^{[1
]}

机构：

[1] Dept. of Elec. and Electron. Eng., Faculty of Science and Engineering, Saga University, Saga 840-8502, Japan

来源：

| 1600年 / JJAP, Tokyo卷 / 39期

关键词：

Experimental; (EXP);

D O I：

暂无

中图分类号：

学科分类号：

摘要：

We have studied the characteristics of reactive ion etching of indium nitride layers using CH4 and H2 gases. The effects of CH4/H2 gas composition, total gas pressure, and plasma power on the etching rates were investigated. It was found that variation of the CH4 concentration in gas mixtures leads to changes in both the etching rate and the surface morphology. A smooth etched InN surface was obtained in the range of 5-15% CH4 concentration and 25-55 Pa pressure. The etching rate of InN increases from 260 to 1310 angstroms/min with increasing the plasma power from 100 to 300 W at a 10% CH4 concentration and 45 Pa pressure.

引用

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