Optimization of reactive ion etching of Al0.48In0.52As in CH4/H2 by the experimental design method

被引:0
|
作者
Carpi, Enio L. [1 ]
Van Hove, M. [1 ]
Alay, J.L. [1 ]
Van Rossum, M. [1 ]
机构
[1] Interuniversity Microelectronics, Cent, Leuven, Belgium
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:895 / 901
相关论文
共 50 条
  • [1] OPTIMIZATION OF REACTIVE ION ETCHING OF AL0.48IN0.52AS IN CH4/H-2 BY THE EXPERIMENTAL-DESIGN METHOD
    CARPI, EL
    VANHOVE, M
    ALAY, JL
    VANROSSUM, M
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (03): : 895 - 901
  • [2] CH4/H2 reactive ion etching induced damage of InP
    Neitzert, HC
    Fang, R
    Kunst, M
    Layadi, N
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (06): : 2803 - 2807
  • [3] Optimization of In0.53Ga0.47As reactive ion etching with CH4/H2 using design of experiment methods
    Zavieh, L
    Nordquist, CD
    Mayer, TS
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (03): : 1024 - 1029
  • [4] Reactive ion etching of indium nitride using CH4 and H2 gases
    Gou, Qixin
    Matsuse, Motoatsu
    Nishio, Mitsuhiro
    Ogawa, Hiroshi
    1600, JJAP, Tokyo (39):
  • [5] Reactive ion etching of indium nitride using CH4 and H2 gases
    Guo, QX
    Matsuse, M
    Nishio, M
    Ogawa, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (9A): : 5048 - 5051
  • [6] REACTIVE ION ETCHING OF INP USING CH4/H2 MIXTURES - MECHANISMS OF ETCHING AND ANISOTROPY
    HAYES, TR
    DREISBACH, MA
    THOMAS, PM
    DAUTREMONTSMITH, WC
    HEIMBROOK, LA
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (05): : 1130 - 1140
  • [7] Reactive ion etching of InP for optoelectronic device applications:: Comparison in CH4, CH4/H2, and CH4/Ar gas
    Yu, JS
    Lee, YT
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2000, 37 (03) : 241 - 246
  • [8] Reactive ion etching of ZnSe, ZnSSe, ZnCdSe and ZnMgSSe by H2/Ar and CH4/H2/Ar
    Chen, W.R.
    Chang, S.J.
    Su, Y.K.
    Lan, W.H.
    Lin, A.C.H.
    Chang, H.
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2000, 39 (6 A): : 3308 - 3313
  • [9] Reactive ion etching of ZnSe, ZnSSe, ZnCdSe and ZnMgSSe by H2/Ar and CH4/H2/Ar
    Chen, WR
    Chang, SJ
    Su, YK
    Lan, WH
    Lin, ACH
    Chang, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (6A): : 3308 - 3313
  • [10] Electrical evaluation of sidewall damage caused by CH4/H2 reactive ion etching
    Yuda, M.
    Kondo, S.
    Noguchi, Y.
    Kishi, K.
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1998, 37 (08): : 4624 - 4626