共 50 条
- [1] OPTIMIZATION OF REACTIVE ION ETCHING OF AL0.48IN0.52AS IN CH4/H-2 BY THE EXPERIMENTAL-DESIGN METHOD JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (03): : 895 - 901
- [2] CH4/H2 reactive ion etching induced damage of InP JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (06): : 2803 - 2807
- [3] Optimization of In0.53Ga0.47As reactive ion etching with CH4/H2 using design of experiment methods JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (03): : 1024 - 1029
- [5] Reactive ion etching of indium nitride using CH4 and H2 gases JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (9A): : 5048 - 5051
- [6] REACTIVE ION ETCHING OF INP USING CH4/H2 MIXTURES - MECHANISMS OF ETCHING AND ANISOTROPY JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (05): : 1130 - 1140
- [8] Reactive ion etching of ZnSe, ZnSSe, ZnCdSe and ZnMgSSe by H2/Ar and CH4/H2/Ar Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2000, 39 (6 A): : 3308 - 3313
- [9] Reactive ion etching of ZnSe, ZnSSe, ZnCdSe and ZnMgSSe by H2/Ar and CH4/H2/Ar JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (6A): : 3308 - 3313
- [10] Electrical evaluation of sidewall damage caused by CH4/H2 reactive ion etching Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1998, 37 (08): : 4624 - 4626