Investigation of thermal annealing for a-C:F:H films deposited with microwave ECR-CVD method

A group of a-C:F:H films with different C - F bond configurations are prepared with microwave electron cyclotron resonance plasma chenal vapor deposition (ECR-CVD) by changing source gas flow ratio of CHF3/CH4. We focus on the influence of annealing temperature on the structure of the film. The results have shown that the film's thickness and its optical band gap E04 present a decrease of different degree with the increasing annealing temperature. With the help of the as-supposed pyrogenation model and the infrared spectra, we have expired the structural source which gives rise to this relationship.