共 50 条
- [1] Some effects of phosphorus doping in SiC:H films prepared using ECR-CVDMATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 48 (03): : 215 - 220Ji, RYoon, SFAhn, JMilne, WI
- [3] A Comparative Study of Boron and Phosphorus Doping Effects in SiC: H Films Prepared by ECR-CVDJournalofMaterialsScience&Technology, 1998, (01) : 65 - 71S.F. Yoon (School of Electrical and Electronic Engineering
- [4] Some effects of boron doping in a-SiC:H films prepared by the ECR-CVD methodJOURNAL OF NON-CRYSTALLINE SOLIDS, 1997, 211 (1-2) : 173 - 179Yoon, SFJi, RAhn, J
- [6] Microwave power effects on the properties of phosphorus-doped SiC:H films prepared using ECR-CVDDIAMOND AND RELATED MATERIALS, 1997, 6 (01) : 48 - 54Yoon, SFJi, RAhn, JMillie, WI
- [7] Doping and microwave power effects on the properties of a-SiC:H and mu c-SiC:H films prepared using ECR-CVDMATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1996, 41 (02): : 273 - 279Yoon, SFJi, RAhn, J
- [8] Influence of boron doping on the properties of amorphous and microcrystalline SiC films prepared using ECR-CVDJOURNAL OF ELECTRONIC MATERIALS, 1996, 25 (12) : 1845 - 1850Yoon, SFJi, RAhn, J
- [9] Doping and microwave power effects in the preparation of n-type SiC:H films using ECR-CVDVACUUM, 1997, 48 (05) : 455 - 462Yoon, SFJi, RAhn, J