Influence of the crystal thickness on the SiC PVT growth rate

被引：0
|
作者：
Cherednichenko, D.I. [1 ]
Khlebnikov, Y.I. [2 ]
Drachev, R.V. [1 ]
Khlebnikov, I.I. [1 ]
Sudarshan, T.S. [1 ]
机构：
[1] Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, United States
[2] Bandgap Technologies Inc., Columbia, SC 29201, United States
来源：
Materials Science Forum | 2002年 / 389-393卷 / 01期
关键词：
D O I：
10.4028/www.scientific.net/msf.389-393.95
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学科分类号：
摘要：
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页码：95 / 98
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