Electrical properties and thermodynamic stability of Sr(Ti1-x,Rux)O3 thin films deposited by inductive-coupling-plasma-induced RF magnetron sputtering

被引：0
|
作者：
Ohara, Ryoichi [1 ]
Schimizu, Tatsuo [1 ]
Sano, Kenya [1 ]
Yoshiki, Masahiko [2 ]
Kawakubo, Takashi [1 ]
机构：
[1] Advanced LSI Technology Laboratory, Corporate Research and Development Center, Toshiba Corp., 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
[2] Material Analysis Group, Corporate Research and Development Center, Toshiba Corp., 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2001年 / 40卷 / 3 A期
关键词：
Electric conductivity - Energy gap - Epitaxial growth - Ground state - Inductively coupled plasma - Magnetron sputtering - Sputter deposition - Strontium compounds - Substrates - Thermodynamic stability - X ray photoelectron spectroscopy;
D O I：
10.1143/jjap.40.1384
中图分类号：
学科分类号：
摘要：
Sr(Ti1-x,Rux)O3 (STRO) epitaxial thin films were deposited on single-crystal SrTiO3(100) substrates using the inductive-coupling-plasma-induced RF magnetron sputtering method without oxygen. The electrical conductivity of STRO films increases with Ru concentration and levels of the Ru 4d states are observed in the band gap of SrTiO3 by X-ray photoelectron spectroscopy (XPS) analysis. These results are consistent with those obtained by first-principles calculations. Thermodynamic stability increases with the decrease of Ru concentration, and STRO (x 2 atmosphere at 600C. This high resistance against reductive processes indicates that STRO (x
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页码：1384 / 1387
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