Analysis of local breakdown process in stressed gate SiO2 films by conductive atomic force microscopy

被引：0

作者：

Seko, Akiyoshi ^{[1
]}

Watanabe, Yukihiko ^{[2
]}

Kondo, Hiroki ^{[1
]}

Sakai, Akira ^{[1
]}

Zaima, Shigeaki ^{[1
]}

Yasuda, Yukio ^{[3
]}

机构：

[1] Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

[2] Toyota Central R and D Labs., Inc., Nagakute, Aichi 480-1192, Japan

[3] Research Institute of KUT, Kochi University of Technology, Tosayamada-cho, Kochi 782-8502, Japan

来源：

Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap | 1600年 / 10卷 / 7582-7587期

关键词：

Compendex;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Atomic force microscopy - Degradation - Electric breakdown - Electric fields - Gates (transistor) - Hole traps - Leakage currents - MOS capacitors - Silica

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